Ordering number : EN8967A SBE813 Schottky Barrier Diode SBE813 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =0.5mA 30 V R R V1I =2.0A 0.435 0.485 V F F Forward Voltage V2I =3.0A 0.47 0.52 V F F Reverse Current I V =15V 42 A R R Interterminal Capacitance C V =10V, f=1MHz 90 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 20 ns rr F R 2 Thermal Resistance Rth(j-a) When mounted on ceramic substrate (1200mm 0.8mm) 50 C / W Ordering Information Device Package Shipping memo SBE813-TL-E VEC8 3,000pcs./reel Pb Free I -- V I -- V F F R R 10 10000 7 5 1000 3 2 100 1.0 7 10 5 3 2 1.0 0.1 0.1 7 5 3 0.01 2 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 510 15 20 25 30 35 Forward Voltage, V -- V IT09868 Reverse Voltage, V -- V IT09869 F R P (AV) -- I P (AV) -- V F O R R 2.0 4.00E--04 Rectangular (1) (2)(4) (3) (1)Rectangular wave =300 wave 1.8 (2)Rectangular wave =240 3.50E--04 (1) (3)Rectangular wave =180 1.6 (4)Sine wave =180 3.00E--04 360 1.4 (2) 360 Sine wave 2.50E--04 Rectangular 1.2 wave V R (3) 180 2.00E--04 1.0 360 Sine wave 360 180 0.8 1.50E--04 V R 0.6 1.00E--04 (4) (1)Rectangular wave =60 0.4 (2)Rectangular wave =120 5.00E--05 0.2 (3)Rectangular wave =180 (4)Sine wave =180 0 0.00E+00 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 35 Average Output Current, I -- A IT09870 Peak Reverse Voltage, V -- V IT10631 O R No.8967-2/6 100C 75C Ta=125C 50C 0C 25C --25C Ta=125C 100C 75C 50C 25C 0C --25C Average Forward Power Dissipation, P (AV) -- W Forward Current, I -- A F F Average Reverse Power Dissipation, P (AV) -- W R Reverse Current, I -- A R