Product Information

SBRB1045G

SBRB1045G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers SCHOTTKY BARRIER RECT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1749 ea
Line Total: USD 2.17

388 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
165 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

SBRB1045G
ON Semiconductor

1 : USD 1.495
10 : USD 1.242
100 : USD 0.9913
500 : USD 0.8637
1000 : USD 0.7234
2600 : USD 0.6912
5200 : USD 0.6912
10400 : USD 0.6647
25350 : USD 0.6475

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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Schottky Power Rectifier, Switch-Mode, 10 A, 45 V MBRB1045G, MBRD1045G, SBRB1045G, www.onsemi.com SBRD81045T4G SCHOTTKY BARRIER This series of Power Rectifiers employs the Schottky Barrier RECTIFIER principle in a large metaltosilicon power diode. Stateoftheart 10 AMPERES, 45 VOLTS geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and 1 polarity protection diodes. 4 3 Features Guardring for Stress Protection MARKING DIAGRAM Low Forward Voltage 175C Operating Junction Temperature 4 AY WW Epoxy Meets UL 94 V0 0.125 in MBRB1045G 1 Short Heat Sink Tab Manufactured Not Sheared AKA 3 SBRB and SBRD8 Prefixes for Automotive and Other Applications 2 D PAK3 Requiring Unique Site and Control Change Requirements CASE 418B AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS A = Assembly Location Compliant Y = Year WW = Work Week Mechanical Characteristics: MBRB1045 = Device Code Case: Epoxy, Molded, Epoxy Meets UL 94 V0 G = PbFree Package 2 AKA = Diode Polarity Weight: 1.7 grams for D PAK (approximately) 0.4 grams for DPAK (approximately) MARKING DIAGRAM Finish: All External Surfaces Corrosion Resistant and Terminal 4 Leads are Readily Solderable AYWW Lead and Mounting Surface Temperature for Soldering Purposes: 2 1 B10 260C Max. for 10 Seconds 3 45G DPAK Device Meets MSL1 Requirements CASE 369C ESD Ratings: A = Assembly Location Machine Model = C (> 400 V) Y = Year Human Body Model = 3B (> 8000 V) WW = Work Week B1045 = Device Code G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 11 MBRB1045/DMBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current, T = 135C I 10 A C F(AV) Peak Repetitive Forward Current I A FRM (Square Wave, Duty = 0.5) T = 135C 20 C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) (MBRB/SBRB) 70 (MBRD/SBRD) Operating Junction and Storage Temperature Range (Note 1) T , T 65 to +175 C J stg Voltage Rate of Change (Rated V ) dv/dt 10000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W (MBRB1045G) JunctiontoCase (Note 2) R 1.0 JC JunctiontoAmbient (Note 2) R 50 JA (MBRD1045G) JunctiontoCase (Note 2) R 2.43 JC JunctiontoAmbient (Note 2) 68 R JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (I = 10 Amps, T = 125C) F J 0.57 (I = 20 Amps, T = 125C) F J 0.72 (I = 20 Amps, T = 25C) F J 0.84 Maximum Instantaneous Reverse Current (Note 3) I mA R (Rated dc Voltage, T = 125C) J 15 (Rated dc Voltage, T = 25C) J 0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping MBRB1045G 50 Units / Rail SBRB1045G 50 Units / Rail 2 D PAK3 (PbFree) MBRB1045T4G 800 Units / Tape & Reel SBRB1045T4G 800 Units / Tape & Reel MBRD1045G 50 Units / Rail MBRD1045T4G 2,500 Units / Tape & Reel DPAK (PbFree) SBRD81045T4G 2,500 Units / Tape & Reel SSBRD81045T4G 2,500 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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