Product Information

SBRB1545CTG

SBRB1545CTG electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers SCHOTTKY RECT 15A 45V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 650
Multiples : 50

Stock Image

SBRB1545CTG
ON Semiconductor

650 : USD 0.5838
N/A

Obsolete
0 - Global Stock

MOQ : 516
Multiples : 516

Stock Image

SBRB1545CTG
ON Semiconductor

516 : USD 0.8474
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

SBRB1545CTG
ON Semiconductor

1 : USD 1.7795
10 : USD 1.5498
100 : USD 1.174
500 : USD 0.9514
1000 : USD 0.7816
2600 : USD 0.7409
10400 : USD 0.699
25350 : USD 0.699
50050 : USD 0.6979
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1

Stock Image

SBRB1545CTG
ON Semiconductor

1 : USD 1.5469
3 : USD 1.3977
10 : USD 1.2348
15 : USD 1.0489
41 : USD 0.9919
N/A

Obsolete
     
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MBRB1545CTG, SBRB1545CTG S witch-mode Power Rectifier 2 D PAK Surface Mount Power Package MBRB1545CTG, SBRB1545CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 7.5 A F(AV) (Rated V , T = 167C) Total Device 15 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 166C) 15 R C NonRepetitive Peak Surge Current I A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) I 1.0 A RRM Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance C/W Junction to Case R 2.0 JC Junction to Ambient (Note 2) R 50 JA 2. When mounted using minimum recommended pad size on FR4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 7.5 Amps, T = 125C) 0.57 F J (i = 15 Amps, T = 125C) 0.72 F J (i = 15 Amps, T = 25C) 0.84 F J Maximum Instantaneous Reverse Current (Note 3) i mA R (Rated dc Voltage, T = 125C) 15 J (Rated dc Voltage, T = 25C) 0.1 J 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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