LOT No. LOT No. Ordering number : ENA1504A SBS822 Schottky Barrier Diode SBS822 Electrical Characteristics at Ta=25C (Value per element) Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =0.5mA 20 V R R V1I =0.5A 0.34 0.39 V F F Forward Voltage V2I =0.7A 0.37 0.42 V F F V3I =1A 0.41 0.46 V F F Reverse Current I V =10V 110 A R R Interterminal Capacitance C V =10V, f=1MHz 19 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R 2 Thermal Resistance Rth(j-a) When mounted on ceramic substrate (1000mm 0.8mm) 130 C / W t Test Circuit rr Duty10% 50 100 10 10s --5V t rr I -- V I -- V F F R R 2 1E+05 1.0 7 1E+04 5 3 1E+03 2 0.1 1E+02 7 5 3 1E+01 2 0.01 1E+00 7 5 3 1E-01 2 0.001 1E-02 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 Forward Voltage, V -- V IT14723 Reverse Voltage, V -- V IT14724 F R Ta -- I C -- V O R 2 150 (1)Rectangular wave =60 f=1MHz (2)Rectangular wave =120 125 (3)Rectangular wave =180 100 (4)Sine wave =180 (5)DC 7 100 5 75 3 50 2 25 (1) (2) (4) (3) (5) 10 0 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 23 5 7 23 572 3 0.1 1.0 10 Reverse Voltage, V -- V Average Output Current, I -- A IT14725 IT14726 R O No. A1504-2/4 0C 50C --25C 25C 75C Ta=125C 100C 100C 75C 50C 25C Ta=125C 0C --25C Ambient Temperature, Ta -- C Forward Current, I -- A F 100mA 100mA 10mA Reverse Current, I -- A R Interterminal Capacitance, C -- pF