LOTNo. LOTNo. SCH1330 Power MOSFET 20V, 241m , 1.5A, Single P-Channel This low-profile high-power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to www.onsemi.com minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance V R (on) Max I DSS DS D Max High Speed Switching 241m 4.5V 1.8V drive 20V 385m 2.5V 1.5A ESD Diode-Protected Gate 615m 1.8V Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm1.6mm0.56mmt) ELECTRICAL CONNECTION Typical Applications P-Channel Battery Switch 1,2,5,6 Load Switch SPECIFICATIONS 1:Drain ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 2:Drain Parameter SymbolValue Unit 3:Gate 3 4:Source Drain to Source Voltage V 20 V DSS 5:Drain Gate to Source Voltage V 10 V 6:Drain GSS Drain Current (DC) I 1.5 A D 4 Drain Current (Pulse) I 6 A DP PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1 W D 2 (900mm 0.8mm) YF Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage TL the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE RATINGS See detailed ordering and shipping information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : August 2015 - Rev. 2 SCH1330/D SCH1330 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 20 V BR DSS D GS Zero-Gate Voltage Drain Current I V =20V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 0.4 1.4 V GS DS D Forward Transconductance g V =10V, I =750mA 1.14 1.9 S FS DS D R (on)1 I =750mA, V =4.5V 185 241m DS D GS Static Drain to Source On-State 275 385 R (on)2 I =300mA, V =2.5V m DS D GS Resistance R (on)3 I =100mA, V =1.8V 410 615 m DS D GS Input Capacitance Ciss 120 pF Output Capacitance Coss 26 pF V =10V, f=1MHz DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 5.3 ns d Rise Time t 9.7 ns r See specified Test Circuit Turn-OFF Delay Time 16 ns t (off) d Fall Time 14 ns t f Total Gate Charge Qg 1.7 nC Gate to Source Charge Qgs 0.28 nC V =10V, V =4.5V, I =1.5A DS GS D Gate to Drain Miller Charge Qgd 0.47 nC Forward Diode Voltage V SD I =1.5A, V=0V 0.89 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --10V DD IN 0V --4.5V I =--750mA D V IN R =13.3 L D V OUT PW=10s D.C.1% G SCH1330 P.G 50 S www.onsemi.com 2