NLAS3158 Low Voltage Dual SPDT Analog Switch Dual 2:1 Multiplexer The NLAS3158 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology. It achieves very low www.onsemi.com propagation delay and RDS resistances while maintaining CMOS ON low power dissipation. Analog and digital voltages that may vary WDFN12 across the full powersupply range (from V to GND). This device CC 12 MN SUFFIX is a drop in replacement for the PI5A3158. CASE 485AG The select pin has overvoltage protection that allows voltages 1 above V up to 7.0 V to be present on the pin without damage or CC, MARKING DIAGRAM disruption of operation of the part, regardless of the ASM operating voltage. Features 1 High Speed: t = 1.0 ns (Typ) at V = 5.0 V PD CC AS = Specific Device Code M = Date Code Low Power Dissipation: I = 1.0 A (Max) at T = 25C CC A = PbFree Package Standard CMOS Logic Levels (Note: Microdot may be in either location) High Bandwidth, Improved Linearity Low RDS : 8 Max at 3 V FUNCTION TABLE ON Break Before Make Circuitry, Prevents Inadvertent Shorts Select Input Function This is a PbFree Device L B0 Connected to A H B1 Connected to A Typical Applications Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV May be used for Clock Switching, Data MUXing, etc. A V 1 12 0 CC Can Switch Balanced Signal Pairs, e.g. LVDS 200 Mb/s Important Information Latchup Performance Exceeds 300 mA 2 B 11 B 0 0 0 1 Pin for Pin Drop in for PI5A3158 WDFN Package, 3x1 mm GND 10 S 3 ESD Performance: Human Body Model 2000 V 0 Machine Model 200 V Extended Automotive Temperature Range 55C to +125C A V 9 (See Appendix A) 1 4 CC B 5 8 B 1 0 1 1 GND 7 S 6 1 Figure 1. Pinout (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2015 Rev. 2 NLAS3158/DNLAS3158 MAXIMUM RATINGS Rating Symbol Value Unit Supply Voltage V 0.5 to +7.0 V CC DC Switch Input Voltage (Note 1) V 0.5 to V + 0.5 V IS CC DC Input Voltage (Note 1) V 0.5 to + 7.0 V IN DC Input Diode Current V 0 V I 50 mA IN IK DC Output Current I 128 mA OUT DC V or Ground Current I /I +100 mA CC CC GND Storage Temperature Range T 65 to +150 C stg Junction Temperature Under Bias T 150 C J Junction Lead Temperature (Soldering, 10 Seconds) T 260 C L Power Dissipation +85C P 180 mW D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed. RECOMMENDED OPERATING CONDITIONS (Note 2) Characteristic Symbol Min Max Unit Supply Voltage Operating V 1.65 5.5 V CC Select Input Voltage V 0 V V IN CC Switch Input Voltage V 0 V V IS CC Output Voltage V 0 V V OUT CC Operating Temperature T 55 +125 C A Input Rise and Fall Time t , t ns/V r f Control Input V = 2.3 V3.6 V 0 10 CC Control Input V = 4.5 V5.5 V 0 5.0 CC Thermal Resistance 350 C/W JA Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 2. Select input must be held HIGH or LOW, it must not float. www.onsemi.com 2