MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper PChannel Depletion www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique 2 SOURCE Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS GATE Compliant 1 DRAIN MAXIMUM RATINGS 3 Rating Symbol Value Unit SOT23 (TO236) CASE 31808 DrainGate Voltage V 25 Vdc DG 1 STYLE 10 GateSource Voltage V 25 Vdc 2 GS Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS 6Y M Total Device Dissipation FR5 Board P 225 mW D (Note 1) T = 25C 1.8 mW/C A 1 Derate above 25C 6Y = Specific Device Code Thermal Resistance, R 556 C/W JA M = Date Code* JunctiontoAmbient = PbFree Package Junction and Storage Temperature T , T 55 to +150 C J stg (Note: Microdot may be in either location) 1. FR5 = 1.0 0.75 0.062 in. *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBFJ177LT1G SOT23 3000 / Tape & (PbFree) Reel SMMBFJ177LT1G SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 8 MMBFJ177LT1/DMMBFJ177LT1G, SMMBFJ177LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage (V = 0, I = 1.0 Adc) V 30 Vdc DS D (BR)GSS Gate Reverse Current (V = 0 Vdc, V = 20 Vdc) I 1.0 nAdc DS GS GSS Gate Source Cutoff Voltage (V = 15 Vdc, I = 10 nAdc) V 0.8 2.5 Vdc DS D GS(off) ON CHARACTERISTICS ZeroGateVoltage Drain Current (V = 0, V = 15 Vdc) (Note 2) I 1.5 20 mAdc GS DS DSS Drain Cutoff Current (V = 15 Vdc, V = 10 Vdc) I 1.0 nAdc DS GS D(off) r 300 Drain Source On Resistance (I = 500 Adc) D DS(on) Input Capacitance C 11 pF iss V = 0, V = 10 Vdc DS GS f = 1.0 MHz Reverse Transfer Capacitance C 5.5 rss Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle 2%. TYPICAL CHARACTERISTICS 8 14 VGS = 0 V V = 0 V 7 GS 12 VGS = 0.1 V f = 1 MHz 6 10 VGS = 0.3 V 5 8 4 VGS = 0.5 V 6 3 VGS = 0.7 V 4 2 VGS = 0.9 V 2 1 0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 V , DRAINSOURCE VOLTAGE (V) V , DRAINSOURCE VOLTAGE (V) DS DS Figure 1. Drain Current vs. DrainSource Figure 2. Reverse Transfer Capacitance Voltage 32 V = 0 V GS 28 f = 1 MHz 24 20 16 12 8 4 0 0 5 10 15 20 25 V , DRAINSOURCE VOLTAGE (V) DS Figure 3. Input Capacitance www.onsemi.com 2 I , DRAIN CURRENT (mA) D C , INPUT CAPACITANCE (pF) iss C , REVERSE TRANSFER rss CAPACITANCE (pF)