Product Information

NSVJ2394SA3T1G

NSVJ2394SA3T1G electronic component of ON Semiconductor

Datasheet
JFET NCH J-FET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.46 ea
Line Total: USD 0.46

4551 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5577 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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NSVJ2394SA3T1G
ON Semiconductor

1 : USD 0.3139
10 : USD 0.3108
25 : USD 0.2896
100 : USD 0.2605
250 : USD 0.2405
500 : USD 0.2357
1000 : USD 0.2357
3000 : USD 0.2357

4551 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

NSVJ2394SA3T1G
ON Semiconductor

1 : USD 0.46
10 : USD 0.3922
100 : USD 0.3071
500 : USD 0.2795
1000 : USD 0.2473
3000 : USD 0.2311
6000 : USD 0.23
9000 : USD 0.2173
24000 : USD 0.215

     
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RoHS - XON
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NSVJ2394SA3 N-Channel JFET 15V, 10 to 32mA, 38mS www.onsemi.com Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications. Features ELECTRICAL CONNECTION Large yfs N-Channel Small Ciss 3 This Small Package Enables Sets to be Smaller and Thinner Ultralow Noise Figure Pb-Free and RoHS compliance 1 : Source 2 : Drain AEC-Q101 qualified and PPAP capable. 3 : Gate 1 2 Applications AM Tuner RF Amplifier 3 Low Noise Amplifier 1 2 SC-59 / CP3 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol Value Unit V MARKING Drain-to-Source Voltage 15 V DSX V Gate-to-Drain Voltage 15 V GDS I Gate Current 10 mA G I Drain Current 50 mA D P Allowable Power Dissipation 200 mW D Operating Junction and T T 55 to 150 C J, Stg Storage Temperature Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : November 2015 - Rev. 0 NSV2394SA3/D NSVJ2394SA3 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max V Gate-to-Drain Breakdown Voltage I = 10A, V = 0V, 15 V (BR)GDS G DS Gate Cutoff Current I V = 10V, V = 0V nA 1.0 GSS GS DS V V = 5V, I = 100A Cutoff Voltage 0.3 0.7 1.5 V GS(off) DS D I V = 5V,V = 0V Drain Current 10 32 mA DSS DS GS V = 5V, V = 0V, f = 1kHz Forward Transfer Admittance yfs 20 38 mS DS GS Input Capacitance Ciss 10 pF V = 5V, V = 0V, f = 1MHz DS GS Reverse Transfer Capacitance Crss 2.9 pF V = 5V, Rg = 1k, I = 1mA, f = 1kHz Noise Figure NF 1.0 dB DS D Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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