X-On Electronics has gained recognition as a prominent supplier of SMMBT3906LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SMMBT3906LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SMMBT3906LT1G ON Semiconductor

SMMBT3906LT1G electronic component of ON Semiconductor
SMMBT3906LT1G ON Semiconductor
SMMBT3906LT1G Bipolar Transistors - BJT
SMMBT3906LT1G  Semiconductors

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See Product Specifications
Part No. SMMBT3906LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT SS GP XSTR SPCL TR
Datasheet: SMMBT3906LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.027 ea
Line Total: USD 162 
Availability - 90210
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
90210
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.027
9000 : USD 0.018
27000 : USD 0.0176
51000 : USD 0.0171
102000 : USD 0.0168
150000 : USD 0.0166
252000 : USD 0.0166
501000 : USD 0.0165

9831
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 3876
Multiples : 1
3876 : USD 0.0671
7381 : USD 0.0352
7491 : USD 0.0347
7844 : USD 0.0331
8231 : USD 0.0316
8659 : USD 0.0301
9133 : USD 0.0285
9662 : USD 0.0269
10257 : USD 0.0253

765330
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 12000
Multiples : 3000
12000 : USD 0.0251
12000 : USD 0.0229
15000 : USD 0.0188

116
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ : 10
Multiples : 10
10 : USD 0.08
100 : USD 0.063
300 : USD 0.0546
3000 : USD 0.0325
6000 : USD 0.0292
9000 : USD 0.0274

22586
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

130950
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 13275
Multiples : 1
13275 : USD 0.0354
100000 : USD 0.0295

9831
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 7844
Multiples : 1
7844 : USD 0.0331
8231 : USD 0.0316
8659 : USD 0.0301
9133 : USD 0.0285
9662 : USD 0.0269
10257 : USD 0.0253

17460
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 12000
Multiples : 3000
12000 : USD 0.0258
12000 : USD 0.0234
15000 : USD 0.0202

90210
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 9000
Multiples : 3000
9000 : USD 0.0365
12000 : USD 0.0243
27000 : USD 0.0229
51000 : USD 0.0222
102000 : USD 0.0217

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the SMMBT3906LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMMBT3906LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 40 Vdc CBO 3 EmitterBase Voltage V 5.0 Vdc EBO 1 Collector Current Continuous I 200 mAdc C 2 Collector Current Peak (Note 3) I 800 mAdc CM SOT23 (TO236) THERMAL CHARACTERISTICS CASE 318 Characteristic Symbol Max Unit STYLE 6 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A MARKING DIAGRAM Derate above 25C 1.8 mW/C Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P 2A M D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, JunctiontoAmbient R 417 C/W JA 2A = Specific Device Code Junction and Storage Temperature T , T 65 to +150 C J stg M = Date Code* = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. *Date Code orientation and/or overbar may 1. FR5 = 1.0 0.75 0.062 in. vary depending upon manufacturing location. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. ORDERING INFORMATION Device Package Shipping MMBT3906LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT3906LT3G SOT23 10,000 / Tape & (PbFree) Reel SMMBT3906LT1G SOT23 3,000 / Tape & (PbFree) Reel SMMBT3906LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: August, 2017 Rev. 13 MMBT3906LT1/DMMBT3906L, SMMBT3906L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 4) DC Current Gain H FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 250 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 10 EB C Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 2.0 12 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 0.1 10 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 100 400 C CE Output Admittance h mhos oe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 3.0 60 C CE Noise Figure NF dB (I = 100 Adc, V = 5.0 Vdc, R = 1.0 k , f = 1.0 kHz) 4.0 C CE S SWITCHING CHARACTERISTICS Delay Time t 35 d (V = 3.0 Vdc, V = 0.5 Vdc, CC BE ns I = 10 mAdc, I = 1.0 mAdc) C B1 Rise Time t 35 r Storage Time t 225 s (V = 3.0 Vdc, I = 10 mAdc, CC C ns I = I = 1.0 mAdc) B1 B2 Fall Time t 75 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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