MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER CollectorEmitter Voltage V 40 Vdc CEO CollectorBase Voltage V 60 Vdc CBO 3 EmitterBase Voltage V 6.0 Vdc SOT23 (TO236) EBO CASE 318 Collector Current Continuous I 600 mAdc C 1 STYLE 6 2 Collector Current Peak I 900 mAdc CM THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 2X M Thermal Resistance, JunctiontoAmbient R 556 C/W JA 1 Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW 2X = Specific Device Code A Derate above 25C 2.4 mW/C M = Date Code* = PbFree Package Thermal Resistance, JunctiontoAmbient R 417 C/W JA (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to +150 C *Date Code orientation and/or overbar may J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Transient pulses must not cause the junction temperature to be exceeded. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBT4401LT1G SOT23 3000 / Tape & SMMBT4401LT1G (PbFree) Reel MMBT4401LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 11 MMBT4401LT1/DMMBT4401L, SMMBT4401L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 0.1 mAdc, I = 0) V 60 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 20 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 40 C CE (I = 10 mAdc, V = 1.0 Vdc) 80 C CE (I = 150 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) 40 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 0.75 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.75 0.95 C B (I = 500 mAdc, I = 50 mAdc) 1.2 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 250 MHz C CE T CollectorBase Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 6.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re SmallSignal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 40 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 30 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 d (V = 30 Vdc, V = 2.0 Vdc, CC EB ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 20 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 30 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 s, 1.0 to 100 s, 200 200 +16 V DUTY CYCLE 2.0% +16 V DUTY CYCLE 2.0% 0 0 1.0 k -14 V 1.0 k C * < 10 pF S - 2.0 V C * < 10 pF S < 20 ns < 2.0 ns - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. TurnOn Time Figure 2. TurnOff Time www.onsemi.com 2