ESD11B
ESD Protection Diode
MicroPackaged Diodes for ESD Protection
The ESD11B Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in www.onsemi.com
cellular phones, MP3 players, digital cameras and many other portable
applications where board space comes at a premium.
Specification Features
Low Capacitance 12 pF
Low Clamping Voltage
MARKING
Small Body Outline Dimensions: 0.60 mm x 0.30 mm
DIAGRAM
Low Body Height: 0.3 mm
PIN 1
Standoff Voltage: 5.0 V
DSN2
XXXX
Low Leakage
CASE 152AA
YYY
Response Time is < 1 ns
IEC6100042 Level 4 ESD Protection
XXXX = Specific Device Code
IEC6100044 Level 4 EFT Protection
YYY = Year Code
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
ORDERING INFORMATION
Mechanical Characteristics
MOUNTING POSITION: Any Device Package Shipping
QUALIFIED MAX REFLOW TEMPERATURE: 260C
ESD11B5.0ST5G DSN2 5000/Tape & Reel
Device Meets MSL 3 Requirements
(PbFree)
For information on tape and reel specifications,
MAXIMUM RATINGS
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Rating Symbol Value Unit
Brochure, BRD8011/D.
IEC 6100042 (ESD) Contact 15 kV
Air 15
Total Power Dissipation on FR5 Board P 250 mW
D
(Note 1) @ T = 25C
A
Thermal Resistance, JunctiontoAmbient R 400 C/W
JA
Junction and Storage Temperature Range T , T 40 to +125 C
J stg
Lead Solder Temperature Maximum T 260 C
L
(10 Second Duration)
Peak Pulse Current, 8 x 20 s double I 2.0 A
pp
exponential waveform (Figure 5)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Semiconductor Components Industries, LLC, 2015
1 Publication Order Number:
October, 2017 Rev. 7 ESD11B/DESD11B
ELECTRICAL CHARACTERISTICS
I
(T = 25C unless otherwise noted)
A
I
PP
Symbol Parameter
I Maximum Reverse Peak Pulse Current
PP
I
T
I
V Clamping Voltage @ I V V V
R
C PP C BR RWM
V
I V V V
R
RWM BR C
V Working Peak Reverse Voltage
RWM
I
T
I Maximum Reverse Leakage Current @ V
R RWM
V Breakdown Voltage @ I
BR T
I
PP
I Test Current
T
BiDirectional
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
V I (A) V (V) @ I V (V) @
RWM BR T C
R
(V) @ V (Note 2) I C (pF) 1 A V
RWM
T C
Device Max Per IEC6100042
(Note 3) (Note 4)
Marking Max Max Min mA Typ Max
Device
ESD11B5.0ST5G 11B5 5.0 1.0 5.8 1.0 12 13.5 10 Figures 1 and 2
See Below
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. V is measured with a pulse test current I at an ambient temperature of 25C.
BR T
3. Surge current waveforms per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042
www.onsemi.com
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