Product Information

STD5407NT4G

STD5407NT4G electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET NFET 40V SPCL TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

STD5407NT4G
ON Semiconductor

1 : USD 1.6937
10 : USD 0.812
100 : USD 0.4179
500 : USD 0.3555
1000 : USD 0.312
2500 : USD 0.2853
5000 : USD 0.2763
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qualification
Series
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NTD5407N, STD5407N, NVD5407N MOSFET Power, Single, N-Channel, DPAK 40 V, 38 A www.onsemi.com Features Low R DS(on) I MAX High Current Capability D V R TYP (Note 1) (BR)DSS DS(ON) Low Gate Charge 40 V 21 m 10 V 38 A STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable* NChannel 4 D These Devices are PbFree and are RoHS Compliant Applications 2 1 3 Electronic Brake Systems DPAK G Electronic Power Steering CASE 369C STYLE 2 Bridge Circuits S MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit MARKING DIAGRAM DraintoSource Voltage V 40 V DSS 1 AYWW GatetoSource Voltage V 20 V 54 GS 07NG Continuous Drain T = 25C I 38 A C D Steady Current R JC State T = 100C 27 C A = Assembly Location* Y = Year Power Dissipation Steady T = 25C P 75 W C D WW = Work Week R State JC 5407N = Specific Device Code Continuous Drain Steady T = 25C I 7.6 A G = PbFree Device A D Current R (Note 1) State JA T = 100C 5.3 A * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Power Dissipation Steady T = 25C P 2.9 W A D stamped in the package, the front side assembly R (Note 1) State JA code may be blank. Pulsed Drain Current t = 10 s I 75 A p DM Operating Junction and Storage Temperature T , 55 to J C ORDERING INFORMATION T 175 STG Device Package Shipping Source Current (Body Diode) I 36 A S NTD5407NT4G DPAK 2500 / Tape & Single Pulse Drainto Source Avalanche EAS 150 mJ (PbFree) Reel Energy (V = 50 V, V = 10 V, I = 17 A, DD GS PK L = 1 mH, R = 25 ) STD5407NT4G* DPAK 2500 / Tape & G (PbFree) Reel Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) NVD5407NT4G* DPAK 2500 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 7 NTD5407N/DNTD5407N, STD5407N, NVD5407N THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit JunctiontoCase (Drain) R 2.0 C/W JC JunctiontoAmbient (Note 1) R 52 C/W JA 1. Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.127 sq in 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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