TIG056BF-1E ON Semiconductor

TIG056BF-1E electronic component of ON Semiconductor Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TIG056BF-1E IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. TIG056BF-1E IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. TIG056BF-1E
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: ON Semiconductor IGBT Transistors NCH IGBT 240A 150V
Datasheet: TIG056BF-1E Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 36.3841
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7.5214
10$ 2.7189
50$ 2.5851
100$ 2.2731
350$ 1.9946
1050$ 1.8386
2800$ 1.7717
N/A

Obsolete
   
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We are delighted to provide the TIG056BF-1E from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TIG056BF-1E and other electronic components in the IGBT Transistors category and beyond.

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Ordering number : ENA1775B TIG056BF N-Channel IGBT TIG056BF Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V I =2mA, V =0V 430 V (BR)CES C GE Collector to Emitter Cutoff Current I V =320V, V =0V 100 A CES CE GE Gate to Emitter Leakage Current I V =30V, V =0V 10 A GES GE CE Gate to Emitter Threshold Voltage V (off) V =10V, I =1mA 2.5 5.0 V GE CE C Collector to Emitter Saturation Voltage V (sat) I =240A, V =15V 3.6 5.0 V CE C GE Input Capacitance Cies 5500 pF Output Capacitance Coes V =20V, f=1MHz 100 pF CE Reverse Transfer Capacitance Cres 70 pF Turn-ON Delay Time t (on) 46 ns d Rise Time t 32 ns r V =320V, I =240A, V =15V, R =10 CE C GE G Turn-OFF Delay Time t (off) 140 ns d Fall Time t 270 ns f Fig1 Large Current R Load Switching Circuit R L C M + V CC R G TIG056BF V GE 100k No. A1775-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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