TIG064E8 Ordering number : ENA1602A SANYO Semiconductors DATA SHEET N-Channel IGBT TIG064E8 Light-Controlling Flash Applications Features Low-saturation voltage Low voltage drive (2.5V) Enhansment type Built-in Gate-to-Emitter protection diode 2 Mounting Height 0.9mm, Mounting Area 8.12mm dv / dt guarantee* Halogen free compliance Speci cations at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage V 400 V CES Gate-to-Emitter Voltage (DC) V 4 V GES Gate-to-Emitter Voltage (Pulse) V PW1ms 5 V GES Collector Current (Pulse) I V =2.5V, C =100F 150 A CP GE M Maximum Collector-to-Emitter dv / dt dV / dt V 320V, starting Tch=25C 400 V / s CE CE Channel Temperature Tch 150 C Storage Temperature Tstg -40 to +150 C * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / s will be 100% screen-detected in the circuit shown as Fig. 1. Product & Package Information Package Dimensions Package : ECH8 unit : mm (typ) 7011A-004 JEITA, JEDEC : - Minimum Packing Quantity : 3000 pcs./reel Top View TIG064E8-TL-H Packing Type: TL Marking 2.9 0.15 85 ZD 0 to 0.02 LOT No. TL 4 1 0.65 0.3 Electrical Connection 87 6 5 1 : Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector 12 3 4 SANYO : ECH8 Bottom View TIG064E8 at Ta=25C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Emitter Breakdown Voltage V I =2mA, V =0V 400 V (BR)CES C GE Collector-to-Emitter Cutoff Current I V =320V, V =0V 10 A CES CE GE Gate-to-Emitter Leakage Current I V =4V, V =0V 10 A GES GE CE Gate-to-Emitter Threshold Voltage V (off) V =10V, I =1mA 0.4 0.9 V GE CE C Collector-to-Emitter Saturation Voltage V (sat) I =100A, V =2.5V 4.2 7 V CE C GE Input Capacitance Cies 3100 pF Output Capacitance Coes V =10V, f=1MHz 30 pF CE Reverse Transfer Capacitance Cres 23 pF Fig.1 Large Current R Load Switching Circuit R L C + M V CC R G TIG064E8 V GE 100k Note1. Gate Series Resistance R 160 is recommended for protection purpose at the time of turn OFF. However, G if dv / dt 400V / s is satis ed at customers actual set evaluation, R < 160 can also be used. G Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off. Ordering Information Device Package Shipping memo TIG064E8-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free I -- V I -- V C CE C GE 150 150 Tc=25C V =10V CE 125 125 100 100 75 75 50 50 25 25 0 0 0 12 34 5697 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-to-Emitter Voltage, V -- V IT15154 Gate-to-Emitter Voltage, V -- V IT15155 CE GE No. A1602-2/7 1.8V 2.5V 75C 3.0V Tc= --25C 25C V =4.0V GE Collector Current, I -- A C Collector Current, I -- A C