TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 3 AMPERE Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 406080100 VOLTS, High Current Gain Bandwidth Product 40 WATTS Compact TO220 Package These Devices are PbFree and are RoHS Compliant* PNP NPN COLLECTOR COLLECTOR MAXIMUM RATINGS 2,4 2,4 Rating Symbol Value Unit Collector Emitter Voltage V Vdc CEO TIP31G, TIP32G 40 1 1 TIP31AG, TIP32AG 60 BASE BASE TIP31BG, TIP32BG 80 TIP31CG, TIP32CG 100 3 3 CollectorBase Voltage V Vdc CB EMITTER EMITTER TIP31G, TIP32G 40 TIP31AG, TIP32AG 60 TIP31BG, TIP32BG 80 4 TIP31CG, TIP32CG 100 EmitterBase Voltage V 5.0 Vdc EB TO220 Collector Current Continuous I 3.0 Adc C CASE 221A Collector Current Peak I 5.0 Adc CM STYLE 1 Base Current I 1.0 Adc B 1 Total Power Dissipation P 2 D 3 T = 25C C 40 W Derate above 25C 0.32 W/C MARKING DIAGRAM Total Power Dissipation P D T = 25C A 2.0 W Derate above 25C 0.016 W/C Unclamped Inductive Load Energy E 32 mJ (Note 1) TIP3xxG Operating and Storage Junction Tem- T , T 65 to +150 C J stg AYWW perature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V = 10 V, R = 100 C CC BE TIP3xx = Device Code THERMAL CHARACTERISTICS xx = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C, Characteristic Symbol Max Unit A = Assembly Location Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Y = Year WW = Work Week Thermal Resistance, JunctiontoCase R 3.125 C/W JC G PbFree Package *For additional information on our PbFree strategy and soldering details, please ORDERING INFORMATION download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information on page 6 of Reference Manual, SOLDERRM/D. this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: September, 2015 Rev. 16 TIP31A/DTIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B TIP31G, TIP32G 40 TIP31AG, TIP32AG 60 TIP31BG, TIP32BG 80 TIP31CG, TIP32CG 100 Collector Cutoff Current I mAdc CEO (V = 30 Vdc, I = 0) CE B TIP31G, TIP32G, TIP31AG, TIP32AG 0.3 (V = 60 Vdc, I = 0) CE B TIP31BG, TIP31CG, TIP32BG, TIP32CG 0.3 Collector Cutoff Current I Adc CES (V = 40 Vdc, V = 0) CE EB TIP31G, TIP32G 200 (V = 60 Vdc, V = 0) CE EB TIP31AG, TIP32AG 200 (V = 80 Vdc, V = 0) CE EB TIP31BG, TIP32BG 200 (V = 100 Vdc, V = 0) CE EB TIP31CG, TIP32CG 200 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 1.0 Adc, V = 4.0 Vdc) 25 C CE (I = 3.0 Adc, V = 4.0 Vdc) 10 50 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 375 mAdc) 1.2 C B BaseEmitter On Voltage V Vdc BE(on) (I = 3.0 Adc, V = 4.0 Vdc) 1.8 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE test SmallSignal Current Gain h fe (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2