TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor November 2014 TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Features High-Voltage and Switching Applications High Sustaining Voltage: V (sus) = 250 V, 300 V, 350 V, 400 V CEO 1 A Rated Collector Current TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP47 TIP47 TO-220 3L (Single Gauge) Bulk TIP47TU TIP47 TO-220 3L (Single Gauge) Rail TIP48 TIP48 TO-220 3L (Single Gauge) Bulk TIP48TU TIP48 TO-220 3L (Single Gauge) Rail TIP49 TIP49 TO-220 3L (Single Gauge) Bulk TIP50 TIP50 TO-220 3L (Single Gauge) Bulk TIP50TU TIP50 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit TIP47 350 TIP48 400 V Collector-Base Voltage V CBO TIP49 450 TIP50 500 TIP47 250 TIP48 300 V Collector-Emitter Voltage V CEO TIP49 350 TIP50 400 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1 A C I Collector Current (Pulse) 2 A CP I Base Current 0.6 A B T Junction Temperature 150 C J T Storage Temperature Range - 65 to 150 C STG 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0TIP47 / TIP48 / TIP49 / TIP50 NPN Silicon Transistor Thermal Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit Collector Dissipation (T = 25C) 40 C P W C Collector Dissipation (T = 25C) 2 A Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Typ. Max. Unit TIP47 250 TIP48 300 Collector-Emitter Sustaining V (sus) I = 30 mA, I = 0 V CEO (1) C B Voltage TIP49 350 TIP50 400 TIP47 V = 150 V, I = 0 1 CE B TIP48 V = 200 V, I = 0 1 CE B Collector Cut-Off Current I mA CEO TIP49 V = 250 V, I = 0 1 CE B TIP50 V = 300 V, I = 0 1 CE B TIP47 V = 350 V, V = 0 1 CE EB TIP48 V = 400 V, V = 0 1 CE EB I Collector Cut-Off Current mA CES TIP49 V = 450 V, V = 0 1 CE EB TIP50 V = 500 V, V = 0 1 CE EB I Emitter Cut-Off Current V = 5 V, I = 0 1 mA EBO BE C V = 10 V, I = 0.3 A 30 150 CE C (1) h DC Current Gain FE V = 10 V, I = 1 A 10 CE C (1) V (sat) Collector-Emitter Saturation Voltage I = 1 A, I = 0.2 A 1 V CE C B (1) V (on) Base-Emitter On Voltage V = 10 V, I = 1 A 1.5 V BE CE C V = 10 V, I = 0.2 A, CE C f Current Gain Bandwidth Product 10 MHz T f = 1 MHz Note: 1. Pulse test: pw 300 s, duty cycle 2%. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com TIP47 / TIP48 / TIP49 / TIP50 Rev. 1.1.0 2