ODA-6W-500M Opto Diode

From Deep UV to Mid-IR 2 NIR/Red Enhanced 6 mm ODA-6W-500M An ITW Company Photodiode-Preamplifier FEATURES Large Active Area Low Noise High Sensitivity Custom Gains Available Hermetically Sealed TO-39 Electro-Optical Characteristics at 23C Parameters Test Conditions Min Typ Max Units Dark Offset V = 5 V 1 2 mV s V = 5 s Dark Offset Noise 283 500 V rms BW = 0.1 to 135 kHz V = 5 V s Sensitivity 290 315 V/W = 940 nm V = 5 V s Frequency Response (3 db) 100 130 Hz = 940 nm NEP = 940 nm 0.06 pW/Hz Transimpedance Gain 500 M Supply Current 850 950 A Absolute Ratings Units Parameters Voltage Supply Range +V to V* 5 to 15 V Power Dissipation 15 mW Storage and Operating Temperature 25 to + 100C Soldering Temperature (1/16" from case for 3 seconds max) +260C *Voltage supply across the device requires a minimum of 5 V to a maximum of 15 V from +V to V. Revision July 2, 2019 Page 1 of 2 From Deep UV to Mid-IR 2 NIR/Red Enhanced 6 mm ODA-6W-500M An ITW Company Photodiode-Preamplifier Typical Spectral Response 350 300 250 200 150 100 50 0 300 400 500 600 800 900 1000 1100 WAVELENGTH (nm) Package Information .085 .050 MIN +V .078 V out CASE .370 (.325) .358 .031 .016 .035 V .019 GND .028 (.200 PIN CTRS) (.012 MAX) .163 SHOWN WITH CAP REMOVED FOR CLARITY Dimensions are in inch [metric] units. R1 C1 3 +V IN U1 D1 0.1 ufd IN + 4 V OUT 12 V 0.1 ufd Specifications are subject to change without prior notice. 1260 Calle Suerte, Camarillo, California 93012 Phone: +1 805.499.0335 | Fax: +1 805.499.8108 | sales@optodiode.com | www.optodiode.com Revision July 2, 2019 Page 2 of 2 RESPONSIVITY (V/mW)