ODD-42WB Opto Diode

From Deep UV to Mid-IR 2 ODD-42WB Photodiode 42 mm An ITW Company FEATURES TO-8 Hermetic Package Optimized Die Size for Maximum Signal Low Capacitance Electro-Optical Characteristics at 25C Parameters Test Conditions Min Typ Max Units 2 Active Area 9.91 mm x 4.28 mm 42 mm Responsivity @ 450 nm 0.2 0.28 A/W Dark Current, Idr V = 10 V 11 25 nA R Reverse Breakdown Voltage, V I = 10 A 25 60 Volts R R Capacitance, C V = 10 V 85 pF R Rise Time V = 10 V 30 nsec R Series Resistance V = 1 V 35 100 Ohms f Thermal Parameters Units Parameters Storage and Operating Temperature Range -55C to 100C Maximum Junction Temperature 100C 1 Lead Soldering Temperature 260C 1 1/16" from case for 10 seconds. Revision May 25, 2018 Page 1 of 3 From Deep UV to Mid-IR 2 ODD-42WB Photodiode 42 mm An ITW Company Capacitance vs Bias Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 02468 10 12 14 16 18 20 BIAS VOLTAGE (V) Typical Spectral Response 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 1200 WAVELENGTH (nm) Dark Current vs Voltage 3.0 2.5 2.0 1.5 1.0 0.5 0.0 05 10 15 20 25 30 35 40 45 50 55 60 REVERSE VOLTAGE (Vr) Revision May 25, 2018 Page 2 of 3 RELATIVE DARK CURRENT (ld) RESPONSIVITY RELATIVE CAPACITANCE