Power Transistors 2SA0963 (2SA963) Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm +0.5 7.5 0.1 2.90.2 Complementary to 2SC2209 120 Features Large collector power dissipation P C Output of 4 W to 5 W can be obtained by a complementary pair with 2SC2209 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO 0.750.1 0.50.1 0.50.1 1.260.1 Collector-emitter voltage (Base open) V 40 V CEO 4.60.2 2.30.2 Emitter-base voltage (Collector open) V 5V EBO 1: Emitter 2: Collector Collector current I 1.5 A C 123 3: Base Peak collector current I 3A CP TO-126A-A1 Package * P 10 W Collector power dissipation C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Note) : T = 25C * C Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 1 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 40 V CEO C B Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C * Forward current transfer ratio h V = 5 V, I = 1 A 80 220 FE CE C Collector-emitter saturation voltage V I = 1.5 A, I = 0.15 A 1.0 V CE(sat) C B Base-emitter saturation voltage V I = 2 A, I = 0.2 A 1.5 V BE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 5 V, I = 0, f = 1 MHz 70 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 80 to 160 120 to 220 FE Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00006BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. 2SA0963 P T I V V I C a C CE CE(sat) C 4.0 12 T = 25C C I / I = 10 C B I = 40 mA B 10 3.5 10 35 mA 30 mA 3.0 25 mA 8 2.5 1 20 mA 2.0 6 15 mA T = 100C 1.5 C 10 mA 4 0.1 25C 1.0 25C 5 mA 2 0.5 0 0 0.01 0 2 4 6 8 10 0 40 80 120 160 200 0.01 0.1 1 Collector-emitter voltage V (V) Ambient temperature T (C) Collector current I (A) CE a C V I h I f I BE(sat) C FE C T E 240 V = 5 V CB I / I = 10 V = 5 V C B CE f = 200 MHz 10 1 000 T = 25C C 200 T = 100C 25C C 160 T = 25C 25C C 1 100 100C 120 25C 80 10 0.1 40 1 0 0.01 0.01 0.1 1 0.01 0.1 1 0.01 0.1 1 10 Emitter current I (A) Collector current I (A) Collector current I (A) E C C C V V R I T ob CB CER BE CEO a 1 000 60 V = 12 V CE T = 25C I = 0 C E 140 f = 1 MHz T = 25C C 50 120 40 100 100 80 30 60 10 20 40 10 20 1 0 0 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 1 10 100 Base-emitter resistance R (k ) Ambient temperature T (C) Collector-base voltage V (V) BE a CB 2 SJD00006BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.