X-On Electronics has gained recognition as a prominent supplier of 2SA2161J0L Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA2161J0L Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA2161J0L Panasonic

2SA2161J0L electronic component of Panasonic
2SA2161J0L Panasonic
2SA2161J0L Bipolar Transistors - BJT
2SA2161J0L  Semiconductors

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See Product Specifications
Part No. 2SA2161J0L
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 12V 0.5A SSMINI3P
Datasheet: 2SA2161J0L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1267
N/A

0
MOQ : 1
Multiples : 1
1 : USD 0.2003
10 : USD 0.1709
100 : USD 0.146
500 : USD 0.1299
1000 : USD 0.1267
N/A

   
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Product Category
RoHS - XON
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We are delighted to provide the 2SA2161J0L from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA2161J0L and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA2161J Silicon PNP epitaxial planar type For general amplification +0.05 Unit: mm 1.60 0.03 +0.03 0.12 0.01 1.000.05 Complementary to 2SC6037J 3 Features 12 Low collector-emitter saturation voltage V CE(sat) 0.270.02 SS-Mini type package, allowing downsizing of the equipment and (0.50)(0.50) automatic insertion through the tape packing 5 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 15 V CBO Collector-emitter voltage (Base open) V 12 V CEO 1: Base Emitter-base voltage (Collector open) V 5V EBO 2: Emitter 3: Collector Collector current I 500 mA C EIAJ: SC-89, JEDEC: SOT-490 Peak collector current I 1A CP SSMini3-F1 Package Collector power dissipation P 125 mW C Marking Symbol: 2U Junction temperature T 125 C j Storage temperature T 55 to +125 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 15 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 0 12 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 15 V, I = 0 0.1 A CBO CB E Forward current transfer ratio h V = 2 V, I = 10 mA 270 680 FE CE C Collector-emitter saturation voltage V I = 200 mA, I = 10 mA 250 mV CE(sat) C B Transition frequency f V = 2 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4.5 pF ob CB E (Common base, input open circuited) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2004 SJC00312BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA2161J P T I V I V C a C CE C BE 140 100 70 IB = 160 A V = 2 V CE T = 25C a 90 120 60 80 140 A 50 100 70 120 A 60 80 40 T = 85C 25C a 100 A 50 60 30 80 A 40 25C 30 40 20 60 A 20 40 A 20 10 10 20 A 0 0 0 0 80 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 20 40 60 100 120 140 0 0.5 1.0 1.5 2.0 2.5 3.0 ( ) Base-emitter voltage V (V) ( ) Collector-emitter voltage V V Ambient temperature T C BE CE a V I h I C V CE(sat) C FE C ob CB 100 1 600 f = 1 MHz I / I = 20 V = 2 V C B CE T = 25C a T = 85C a 500 400 25C T = 85C a 25C 10 300 0.1 25C 200 25C 100 1 0.01 0 0 510 0.1 1 10 100 1 000 1 10 100 1 000 ( ) Collector-base voltage V V Collector current I (mA) Collector current I (mA) CB C C 2 SJC00312BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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