This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0947 (2SB947), 2SB0947A (2SB947A) Silicon PNP epitaxial planar type For low-voltage switcing Unit: mm Features 10.00.2 4.20.2 5.50.2 2.70.2 Low collector-emitter saturation voltage V CE(sat) High-speed switching Full-pack package which can be installed to the heat sink with one screw 3.10.1 Absolute Maximum Ratings T = 25C C Parameter Symbol Rating Unit 1.30.2 1.40.1 2SB0947 V 40 V Collector-base voltage CBO +0.2 0.5 (Emitter open) 0.1 2SB0947A 50 0.80.1 2SB0947 V 20 V Collector-emitter voltage CEO 2.540.3 (Base open) 2SB0947A 40 5.080.5 Emitter-base voltage (Collector open) V 5V EBO 1: Base 2: Collector Collector current I 10 A C 132 3: Emitter Peak collector current I 15 A EIAJ: SC-67 CP TO-220F-A1 Package Collector power P 35 W C dissipation T = 25C2 a Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit 2SB0947 V I = 10 mA, I = 0 20 V Collector-emitter voltage CEO C B (Base open) 2SB0947A 40 2SB0947 I V = 40 V, I = 0 50 A Collector-base cutoff CBO CB E current (Emitter open) 2SB0947A V = 50 V, I = 0 50 CB E Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 50 A EBO EB C Forward current transfer ratio h V = 2 V, I = 0.1 A 45 FE1 CE C * h V = 2 V, I = 2 A 60 260 FE2 CE C Collector-emitter saturation voltage V I = 7 A, I = 0.23 A 0.6 V CE(sat) C B Base-emitter saturation voltage V I = 7 A, I = 0.23 A 1.5 V BE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 10 MHz 150 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 200 pF ob CB E (Common base, input open circuited) Turn-on time t I = 2 A, I = 66 mA, I = 66 mA 0.1 s on C B1 B2 Storage time t V = 20 V 0.5 s stg CC Fall time t 0.1 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R Q P h 60 to 120 90 to 180 130 to 260 FE2 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2003 SJD00026BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0947, 2SB0947A P T I V V I C a C CE CE(sat) C 10 50 12 I /I =30 C B TC=25C (1)TC=Ta (2)With a 1001002mm IB=160mA Al heat sink 10 40 (3)With a 50502mm Al heat sink 100mA (4)Without heat sink 8 80mA 1 (PC=2W) TC=100C 30 60mA 6 25C (1) 25C 40mA 20 30mA 4 0.1 20mA 10 (2) 2 10mA (3) (4) 0 0.01 0 0 40 80 120 160 0 2 4 6 8 10 12 0.1 1 10 Collector current I (A) Ambient temperature T (C) Collector-emitter voltage V (V) C a CE V I h I f I BE(sat) C FE C T C 4 4 10 10 10 IC/IB=30 V =2V CE VCE=10V f=10MHz T =25C C 3 3 10 10 TC=25C 1 25C T =100C C 100C 2 2 25C 10 25C 10 0.1 10 10 0.01 1 1 0.1 1 10 0.1 1 10 100 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V t , t , t I Safe operation area ob CB on stg f C 4 10 10 100 Non repetitive pulse f=1MHz Pulsed tw=1ms TC=25C TC=25C Duty cycle=1% IC/IB=30 I (I =I ) CP B1 B2 3 V =20V CC 10 10 I TC=25C C t=10ms t=1ms 1 tstg DC 2 10 1 t on 0.1 t f 10 0.1 1 0.01 0.01 0.1 1 10 100 0 2 4 6 8 0.1 1 10 100 Collector-base voltage V (V) Collector current I (A) Collector-emitter voltage V (V) CB C CE 2 SJD00026BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.