This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Package Features Code Possible to solder radiation fin directly to printed circuit board U-G2 High collector-emitter voltage (Base open) V CEO Pin Name Large collector power dissipation P C 1: Base 2: Collector 3: Emitter Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 50 V CBO Collector-emitter voltage (Base open) V 40 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 1.5 A C Peak collector current I 3A CP Collector power dissipation (T = 25C) P 10 W C C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 1 mA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 40 V CEO C B Collector-base cutoff current (Emitter open) I V = 20 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 10 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C * Forward current transfer ratio h V = 5 V, I = 1 A 80 220 FE1 CE C h V = 5 V, I = 1 mA 10 FE2 CE C Collector-emitter saturation voltage V I = 1.5 A, I = 0.15 A 1V CE(sat) C B Base-emitter saturation voltage V I = 2 A, I = 0.2 A 1.5 V BE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 200 MHz 150 MHz T CE C Collector output capacitance C V = 20 V, I = 0, f = 1 MHz 45 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 80 to 160 120 to 220 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2008 SJD00035BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0968 P T I V V I C a C CE CE(sat) C 16 4.0 T =25C C I /I =10 C B T =Ta C 10 IB=40mA 3.5 35mA 3.0 30mA 12 25mA 2.5 1 20mA 8 2.0 15mA 1.5 TC=100C 10mA 0.1 25C 4 1.0 25C 5mA 0.5 0 0 0.01 0 40 80 120 160 0 2 4 6 8 10 0.01 0.1 1 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (A) a CE C V I h I f I BE(sat) C FE C T E 240 VCB=5V IC/IB=10 V =5V CE f=200MHz 10 1 000 T =25C C 200 TC=100C 25C 160 T =25C 25C C 1 100 100C 120 25C 80 0.1 10 40 0 0.01 1 2 3 4 0.01 0.1 1 0.01 0.1 1 10 10 10 10 Emitter current I (mA) Collector current I (A) Collector current I (A) E C C C V V R I T ob CB CER BE CEO a 120 1 000 VCE=12V TC=25C IE=0 140 f=1MHz T =25C C 100 120 80 100 100 80 60 60 40 10 40 20 20 0 0 1 0.001 0.01 0.1 1 10 1 10 100 0120 40 60 80 10020 Base-emitter resistance R (k ) Collector-base voltage V (V) Ambient temperature T (C) BE CB a 2 SJD00035BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.