This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1996 Silicon NPN epitaxial planar type For low-voltage output amplification Unit: mm For muting 6.90.1 2.50.1 For DC-DC converter (0.7) (4.0) (0.8) Features Low collector-emitter saturation voltage V CE(sat) 0.65 max. Low ON resistance R on High forward current transfer ratio h FE Allowing supply with radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 0.45 0.45 0.05 0.05 1.050.05 Collector-base voltage (Emitter open) V 25 V CBO 2.50.5 2.50.5 Collector-emitter voltage (Base open) V 20 V CEO 1: Emitter Emitter-base voltage (Collector open) V 12 V EBO 2: Collector 123 Collector current I 0.5 A 3: Base C MT-1-A1 Package Peak collector current I 1A CP Collector power dissipation P 600 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 025 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 012 V EBO E C Collector-base cutoff current (Emitter open) I V = 25 V, I = 0 0.1 A CBO CB E 1 2 * * Forward current transfer ratio h V = 2 V, I = 500 mA 200 800 FE1 CE C h V = 2 V, I = 1 A 60 FE2 CE C 1 * Collector-emitter saturation voltage V I = 500 mA, I = 20 mA 0.13 0.40 V CE(sat) C B 1 * Base-emitter saturation voltage V I = 500 mA, I = 50 mA 1.2 V BE(sat) C B Transition frequency f V = 10 V, I = 50 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 pF ob CB E (Common base, input open circuited) 3 * 1.0 ON resistanse R on Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Pulse measurement 3: R Measurement circuit * * on 1 k 2: Rank classification * I = 1 mA Rank R S T B f = 1 kHz V = 0.3 V h 200 to 350 300 to 500 400 to 800 FE1 V V V B V A V B R = 1 000 ( ) on V V A B Publication date: April 2003 SJC00239BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1996 P T I V V I C a C CE CE(sat) C 100 800 1.2 I / I = 25 C B T = 25C a I = 4.0 mA B 3.5 mA 1.0 3.0 mA 10 600 0.8 2.5 mA 2.0 mA 400 0.6 1 1.5 mA T = 75C a 0.4 1.0 mA 25C 0.1 200 25C 0.5 mA 0.2 0 0 0.01 06132 4 5 0.01 0.1 1 10 0 40 80 120 160 ( ) Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I A a CE C V I h I f I BE(sat) C FE C T E 400 100 1200 I / I = 10 C B V = 10 V V = 2 V CB CE T = 25C a 1000 10 300 800 25 C T = 75C a T = -25 C a 1 600 200 25C 75 C 25C 400 0.1 100 200 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 ( ) ( ) Collector current I A Collector current I (A) Emitter current I mA C C E C V R I ob CB on B 24 1 000 I = 0 E R measurement circuit on f = 1 MHz T = 25C I = 1 mA a B 20 100 V V V B A 16 f = 1 kHz V = 0.3 V 12 10 8 1 4 0 0.1 1 10 100 0.01 0.1 1 10 ( ) Collector-base voltage V V Base current I (mA) CB B 2 SJC00239BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.