Product Information

2SD22420PA

2SD22420PA electronic component of Panasonic

Datasheet
TRANS NPN DARL 60V 4A MT-4

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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N/A

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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2SD22420PA
Panasonic

1 : USD 1.7932
10 : USD 1.4969
100 : USD 1.3603
500 : USD 1.3015
N/A

0 - WHS 2


Multiples : 1

Stock Image

2SD22420PA
Panasonic

N/A

     
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RoHS - XON
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Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio h FE High-speed switching 1.20.1 C 1.0 Allowing supply with the radial taping 1.480.2 2.250.2 Absolute Maximum Ratings T = 25C C 0.650.1 0.650.1 Parameter Symbol Rating Unit 0.350.1 1.050.1 2SD2242 V 60 V Collector to base CBO 0.550.1 0.550.1 voltage 2SD2242A 80 2.50.2 2.50.2 2SD2242 V 60 V Collector to CEO 123 emitter voltage 2SD2242A 80 1: Base 2: Collector Emitter to base voltage V 5V EBO 3: Emitter Peak collector current I 8A CP MT-4-A1 Package Collector current I 4A C Internal Connection T = 25CP 15 W Collector power C C C dissipation T = 25C2 a Junction temperature T 150 C B j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C E C Parameter Symbol Conditions Min Typ Max Unit 2SD2242 I V = 60 V, I = 0 200 A Collector cutoff CBO CB E current 2SD2242A V = 80 V, I = 0 200 CB E 2SD2242 I V = 30 V, I = 0 500 A Collector cutoff CEO CE B current 2SD2242A V = 40 V, I = 0 500 CE B Emitter cutoff current I V = 5 V, I = 0 2 A EBO EB C 2SD2242 V I = 30 mA, I = 0 60 V Collector to emitter CEO C B voltage 2SD2242A 80 Forward current transfer ratio h V = 3 V, I = 0.5 A 1 000 FE1 CE C * h V = 3 V, I = 3 A 2 000 10 000 FE2 CE C Base to emitter voltage V V = 3 V, I = 3 A 2.5 V BE CE C Collector to emitter saturation voltage V I = 3 A, I = 12 mA 2 V CE(sat) C B I = 5 A, I = 20 mA 4 C B Transition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Turn-on time t I = 3 A, I = 12 mA, I = 12 mA, 0.5 s on C B1 B2 Storage time t V = 50 V 4 s stg CC Fall time t 1 s f Note) : Rank classification * Rank Q R h 2 000 to 5 000 4 000 to 10 000 FE2 350 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. Power Transistors 2SD2242, 2SD2242A P T I V I V C a C CE C BE 20 10 10 T =25C V =3V C CE (1) T =Ta C (2) Without heat sink I =4.0mA (P =2.0W) B C 8 8 3.5mA 15 3.0mA 2.5mA (1) 25C 2.0mA 1.5mA 6 6 T =100C 25C C 1.0mA 10 0.5mA 4 4 5 2 2 (2) 0 0 0 0 20 40 60 80 100 120 140 16001264 80030.8 1.6 2.4.2 Ambient temperature T (C) Collector to emitter voltage V (V) Base to emitter voltage V (V) a CE BE V I h I C V CE(sat) C FE C ob CB 5 100 10 10000 I /I =250 V =3V I =0 C B CE E f=1MHz 30 3000 T =25C C T =100C C 4 10 10 1000 25C 25C 3 25C 300 T =100C C 3 1 10 100 25C 0.3 30 2 0.1 10 10 0.03 3 0.01 10 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 30 100 ( ) ( ) ( ) Collector current I A Collector current I A Collector to base voltage V V C C CB Area of safe operation (ASO) R t th(t) 100 1000 Non repetitive pulse Note: R was measured at Ta=25C and under natural convection. th (1) Without heat sink T =25C C 30 (2) With a 50 50 2mm Al heat sink I 10 CP 100 (1) t=1ms I C 10ms 3 (2) DC 1 10 0.3 0.1 1 0.03 0.01 0.1 3 2 1 2 3 4 1 3 10 30 100 300 1000 10 10 10 1 10 10 10 10 ( ) ( ) Collector to emitter voltage V V Time t s CE 351 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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