X-On Electronics has gained recognition as a prominent supplier of 2SD20640S Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SD20640S Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SD20640S Panasonic

2SD20640S electronic component of Panasonic
2SD20640S Panasonic
2SD20640S Bipolar Transistors - BJT
2SD20640S  Semiconductors

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See Product Specifications
Part No. 2SD20640S
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS NPN 120V 6A TOP-3F
Datasheet: 2SD20640S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.2064 ea
Line Total: USD 3.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1
Multiples : 1
1 : USD 3.2064
10 : USD 2.8796

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SD20640S from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SD20640S and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2064 Silicon NPN triple diffusion planar type Unit: mm 5.00.2 For high power amplification 15.00.3 (3.2) 11.00.2 Complementary to 2SB1371 3.20.1 Features Excellent collector current I characteristics of forward current C transfer ratio h FE 2.00.2 2.00.1 Wide safe operation area High transition frequency f T 1.10.1 0.60.2 Full-pcak package which can be installed to the heat sink with one screw 5.450.3 10.90.5 Absolute Maximum Ratings T = 25C C 1: Base 123 2: Collector Parameter Symbol Rating Unit 3: Emitter EIAJ: SC-92 Collector-base voltage (Emitter open) V 120 V CBO TOP-3F-A1 Package Collector-emitter voltage (Base open) V 120 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 6A C Peak collector current I 10 A CP Collector power dissipation P 70 W C T = 25C3 a Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage V V = 5 V, I = 4 A 1.8 V BE CE C Collector-base cutoff current (Emitter open) I V = 120 V, I = 050 A CBO CB E Emitter-base cutoff current (Collector open) I V = 3 V, I = 050 A EBO EB C Forward current transfer ratio h V = 5 V, I = 20 mA 20 FE1 CE C * h V = 5 V, I = 1 A 60 200 FE2 CE C h V = 5 V, I = 4 A 20 FE3 CE C Collector-emitter saturation voltage V I = 4 A, I = 0.4 A 2.0 V CE(sat) C B Transition frequency f V = 5 V, I = 0.5 A, f = 1 MHz 20 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 80 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q S P h 60 to 120 80 to 160 100 to 200 FE2 Publication date: September 2003 SJD00243BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2064 P T I V I V C a C CE C BE 80 12 12 (1)T =Ta C V =5V TC=25C CE (2)With a 1001002mm (1) Al heat sink (3)Without heat sink 10 10 IB=500mA 25C (PC=3W) TC=25C 60 400mA 100C 300mA 8 8 200mA 150mA 40 6 6 100mA 4 4 20 50mA (2) 2 2 10mA (3) 0 0 0 04132 0 40 80 120 16001482 Ambient temperature T (C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE V I h I f I CE(sat) C FE C T C 1 100 000 1 000 VCE=5V IC/IB=10 VCE=5V f=1MHz T =25C C T =100C C 10 100 25C 100 25C TC=100C 1 25C 10 10 25C 0.1 1 1 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C C V Safe operation area ob CB 1 000 100 Non repetitive pulse I =0 E TC=25C f=1MHz TC=25C ICP 10 100 IC t=10ms t=100ms 1 DC 10 0.1 0.01 1 1 10 100 1 10 100 1 000 Collector-emitter voltage V (V) Collector-base voltage V (V) CE CB 2 SJD00243BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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