This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD2259 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 6.90.1 2.50.1 0.7 4.0 (0.8) Features High forward current transfer ratio h FE 0.65 max. Low collector-emitter saturation voltage V CE(sat) Allowing supply with the radial taping Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.10 +0.10 0.45 0.45 Collector-base voltage (Emitter open) V 20 V 0.05 0.05 CBO 1.050.05 Collector-emitter voltage (Base open) V 20 V CEO 2.50.5 2.50.5 Emitter-base voltage (Collector open) V 15 V EBO 1: Emitter 2: Collector Collector current I 0.7 A C 123 3: Base Peak collector current I 1.5 A CP MT-2-A1 Package * Collector power dissipation P 1W C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg 2 Note) : Printed circuit board: Copper foil area of 1 cm or more, and the * board thickness of 1.7 mm for the collector portion Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 020 V CBO C E Collector-emitter voltage (Base open) V I = 1 mA, I = 020 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 015 V EBO E C Collector-base cutoff current (Emitter open) I V = 15 V, I = 01 A CBO CB E Collector-emitter cutoff current (Base open) I V = 15 V, I = 010 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 150 mA 1 000 2 500 FE CE C * Collector-emitter saturation voltage V I = 500 mA, I = 50 mA 0.15 0.40 V CE(sat) C B Transition frequency f V = 20 V, I = 20 mA, f = 200 MHz 55 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 10 15 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Pulse measurement * Publication date: January 2003 SJC00254BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SD2259 P T I V I V C a C CE C BE 200 2.4 1.2 Copper plate at the collector V = 10 V CE T = 25C a 2 is more than 1 cm in area, 1.7 mm in thickness 2.0 1.0 160 I = 100 A B 90 A 1.6 0.8 25C 120 80 A T = 75C 25C a 70 A 1.2 0.6 60 A 80 50 A 0.8 0.4 40 A 30 A 40 0.4 0.2 20 A 10 A 0 0 0 0 20 40 60 80 100 120 140 16001264 8 102020.4 0.8 1.2 1.6.0 Collector-emitter voltage V (V) Base-emitter voltage V (V) Ambient temperature T (C) CE BE a V I h I f I CE(sat) C FE C T E 300 100 3 000 I / I = 10 C B V = 10 V CE V = 10 V CB T = 25C a 2 500 250 T = 75C a 10 2 000 200 25C 25C 1 1 500 150 T = 75C a 25C 1 000 100 25C 0.1 500 50 0.01 0 0 0.01 0.1 1 10 0.01 0.1 1 10 1 10 100 1 000 ( ) ( ) ( ) Collector current I A Collector current I A Emitter current I mA C C E C V ob CB 24 I = 0 E f = 1 MHz T = 25C a 20 16 12 8 4 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00254BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.