DA3X108K0L Panasonic

Doc No. TT4-EA-12495 Revision. 3 Product Standards Switching Diode DA3X108K0L DA3X108K0L Silicon epitaxial planar type Unit: mm For small current rectification 2.9 DA2J108 in Mini3 type package 0.4 0.16 3 Features Small reverse current IR High reverse voltage VR Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 (0.95)(0.95) Marking Symbol: 26 1.9 Packaging 1. Anode Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 2. NC 3. Cathode Panasonic Mini3-G3-B JEITA SC-59A Code TO-236AA/SOT-23 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Reverse voltage VR 300 V Internal Connection Maximum peak reverse voltage VRM 300 V 3 Output current (Average) IO (AV) 200 mA Repetitive peak forward current IFRM 225 mA *1 IFSM 500 mA Non-repetitive peak forward surge current Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 12 Note) *1: t = 1 s Page 1 of 4 Established : 2010-03-31 Revised : 2013-06-12 1.5 2.8Doc No. TT4-EA-12495 Revision. 3 Product Standards Switching Diode DA3X108K0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 1.2 V IR1 VR = 200 V 200 nA Reverse current IR2 VR = 300 V 1 A Terminal capacitance Ct VR = 0 V, f = 1 MHz 3.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 3 MHz. Page 2of 4 Established : 2010-03-31 Revised : 2013-06-12