Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF MTM981400BBF Silicon P-channel MOSFET Unit: mm 5.0 For switching 0.4 0.22 8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 28 m (VGS = -4.5 V) Halogen-free / RoHS compliant 12 3 4 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.95 1.27 Marking Symbol BA 1. Source 5. Drain 2. Source 6. Drain Packaging 3. Source 7. Drain 4. Gate 8. Drain Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard) Panasonic SO8-F1-B JEITA SC-111AA Code Absolute Maximum Ratings Ta = 25 C Internal Connection Parameter Symbol Rating Unit Drain-source Voltage VDS -40 V (D) (D) (D) (D) Gate-source Voltage VGS 20 V 8 7 6 5 Drain Current ID -7.0 A Drain Current (Pulsed) IDp -28 A *1 PD 2 W Total Power dissipation Channel Temperature Tch 150 C Operating Ambient Temperature Topr -40 to + 85 C Tstg -55 to +150 Storage Temperature Range C Note: *1 Measuring on ceramic board at 50 mm 50 mm 1.0 mm. 1 2 3 4 (S) (S) (S) (G) Pin Name 1. Source 5. Drain 2. Source 6. Drain 3. 7. Source Drain 4. 8. Gate Drain Page 1 of 6 Established : 2007-11-08 Revised : 2013-10-15 5.0 6.0Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF Electrical Characteristics Ta = 25 C 3C Static Characteristics Min Typ Max Unit Parameter Symbol Conditions Drain-source Breakdown Voltage VDSS ID = -1 mA, VGS = 0 V -40 V Zero Gate Voltage Drain Current IDSS VDS = -40 V, VGS = 0 V -10 A Gate-source Leakage Current IGSS VGS = 16 V, VDS = 0 V 10 A Gate-source threshold Voltage Vth ID = -1.0 mA, VDS = -10.0 V -1 -2.5 V RDS(on)1 ID = -7.0 A, VGS = -10 V 19 25 *1 m Drain-source On-state Resistance RDS(on)2 ID = -3.5 A, VGS = -4.5 V 28 45 *1 Yfs 10 S Forward transfer admittance ID = -7.0 A, VDS = -10 V Input Capacitance Ciss 2 700 VDS = -10 V, VGS = 0 V, f = 1 MHz pF Output Capacitance Coss 190 Reverse Transfer Capacitance Crss 175 *1,*2 td(on) Turn-on Delay Time VDD = -25 V, VGS = 0 V to -10 V 18 ns *1,*2 tr Rise Time ID = -3.5 A 15 *1,*2 td(off) Turn-off Delay Time VDD = -25 V, VGS = -10 V to 0 V 230 ns *1,*2 tf Fall Time ID = -3.5 A 70 Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2of 6 Established : 2007-11-08 Revised : 2013-10-15