Product Information

PNJ4K01F

PNJ4K01F electronic component of Panasonic

Datasheet
Panasonic Ambient Light Sensors Ambient Light Sensor Bipolar IC SMD 6 Pin

Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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PNJ4K01F
Panasonic

1 : USD 0.819
10 : USD 0.5103
25 : USD 0.4229
50 : USD 0.3654
100 : USD 0.3143
500 : USD 0.245
N/A

Obsolete
0 - WHS 2


Multiples : 1

Stock Image

PNJ4K01F
Panasonic

N/A

Obsolete
0 - WHS 3


Multiples : 1

Stock Image

PNJ4K01F
Panasonic

N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

PNJ4K01F
Panasonic

1 : USD 0.8316
10 : USD 0.3917
100 : USD 0.3435
500 : USD 0.2772
1000 : USD 0.264
N/A

Obsolete
0 - WHS 5

MOQ : 33
Multiples : 1

Stock Image

PNJ4K01F
Panasonic

33 : USD 0.4676
50 : USD 0.416
100 : USD 0.369
500 : USD 0.3035
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Operating Supply Voltage
Peak Wavelength
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Product
Brand
Mounting Style
Fall Time
Pd - Power Dissipation
Rise Time
Factory Pack Quantity :
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Cnhts
Hts Code
Product Type
Subcategory
Taric
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This product complies with the RoHS Directive (EU 2002/95/EC). PNJ4K01F Bipolar Integrated Circuit with Photodetection Function For brightness control systems Features Peak sensitivity wavelength: 560 nm Output ratio of incandescent light and uorescent light: 1.1 (typ.) Small, thin type package: 1.55 mm 1.5 mm 0.53 mm Surface-mouting type for reow soldering Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit Operating supply voltage V 0.5 to +7.0 V CC Power dissipation P 35 mW D Operating ambient temperature T 30 to +85 C opr Storage temperature T 40 to +100 C stg Electro-Optical Characteristics T = 25C3C, V = 3 V a CC Parameter Symbol Conditions Min Typ Max Unit Operating supply voltage V 1.4 5.5 V CC 3 * Saturation voltage V E = 100 lx, R = 100 kW 2.60 2.94 3.00 V O(sat) V L 1 * Supply current I E = 1 000 lx, R = 1 kW 480 920 mA CC V L 1, 3 * * Output current 1 I E = 100 lx 29.0 48.0 90.0 mA O1 V 2, 3 * * Output current 2 I E = 10 lx 2.5 4.3 7.9 mA O2 V 2, 3 * * Output current 3 I E = 100 lx 25.0 43.0 79.0 mA O3 V Output current ratio I / I 1.1 1.65 O1 O3 Drain current I E = 0 lx 10 100 nA D V Peak sensitivity wavelength 560 nm PD 4 * Rise time t 100 1 000 ms r 4 * Fall time t 300 1 000 ms f R = 5.1 kW L 4 * Delay time t 50 ms d 4 * Storage time t 5 ms s Note) 1: Light source is CIE standard A light source. (Incandescent lamp) * 2: Light source is uorescence light. * 3: Output current measurement circuit * V CC Light source II PNJ4K01F OUTOUT A 4: Switching time measurement method * V LED pulse CC White LED II 90% PNJ4K01F OUTOUT 10% R L t t r f t t d s Publication date: October 2010 Ver. AEK 1 This product complies with the RoHS Directive (EU 2002/95/EC). PNJ4K01F Block Diagram V CC 1 Current Amp 6 I OUT 2, 3, 4, 5 GND Ver. AEK 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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