PCDD0465G1 Silicon Carbide Schottky Barrier Diode 650 V 4 A VRRM IF TO-252AA Q VF(Typ.) 1.5 V C 6.4 nC Features Temperature Independent Switching Behavior High Surge Current Capability Positive Temperature Coefficient on VF Low Conduction Loss Zero Reverse Recovery o o High junction temperature 175 C Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-252AA molded plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0113 ounces, 0.3217 grams Application PFC, UPS, PV Inverter, Welder o Maximum Ratings and Thermal Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Repetitive Peak Reverse Voltage VRRM 650 V DC Blocking Voltage V 650 V DC o Continuous Forward Current TC= 155 C IF 4 A o Repetitive Peak Surge Current T = 25 C , t =10ms 20 C p I A FRM o Half Sine Wave, D=0.1 T =125 C , t =10ms 16 C p o Peak Forward Surge Current TC= 25 C , tp =10ms 20 A o Half Sine Wave TC=125 C , tp =10ms 16 IFSM Peak Forward Surge Current 280 A t =10us, Pulse p Maximum Power Dissipation Ptotal 46 W o Operating Junction Temperature Range T -55~175 C J o Storage Temperature Range TSTG -55~175 C September 15,2021 PCDD0465G1-REV.00 Page 1 PCDD0465G1 o Electrical Characteristics (Tc = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o IF = 4 A, TJ = 25 C - 1.5 1.7 Forward Voltage Drop VF V o I = 4 A, T = 175 C - 1.8 F J - o V = 650 V, T = 25 C - 2 40 A R J Reverse Leakage Current I R o - 0.02 - mA VR = 650 V, TJ = 175 C Total Capacitive Charge QC I = 4 A, V = 400V - 6.4 - nC F R V = 1V, f = 1MHz - 146 - pF R Total Capacitance C VR = 200V, f = 1MHz - 9.9 - pF V = 400V, f = 1MHz - 6.2 - pF R Capacitance Stored Energy EC VR = 400V - 0.8 - J o Thermal Resistance R - 3.26 - C/W JC September 15,2021 PCDD0465G1-REV.00 Page 2