Silicon Carbide Schottky Barrier Diode 650 V 16 A VRRM IF TO-220AC Q VF(Typ.) 1.5 V C 34.9 nC Features Temperature Independent Switching Behavior High Surge Current Capability Positive Temperature Coefficient on V F Low Conduction Loss Zero Reverse Recovery o High junction temperature 175 C Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: TO-220AC molded plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.067 ounces, 1.89 grams Application PFC, UPS, PV Inverter, EV Charging Station, Welder o Maximum Ratings and Thermal Characteristics (TC = 25 C unless otherwise specified) PARAMETER SYMBOL LIMIT UNITS Repetitive Peak Reverse Voltage VRRM 650 V DC Blocking Voltage V 650 V DC o Continuous Forward Current TC= 140 C IF 16 A o Repetitive Peak Surge Current T = 25 C , t =10ms 56 C p I A FRM o Half Sine Wave, D=0.1 T =125 C , t =10ms 44 C p o Peak Forward Surge Current TC= 25 C , tp =10ms 72 A o Half Sine Wave TC=125 C , tp =10ms 60 IFSM Peak Forward Surge Current 720 A t =10us, Pulse p Maximum Power Dissipation Ptotal 136.4 W o Operating Junction Temperature Range T -55~175 C J o Storage Temperature Range TSTG -55~175 C November 9,2020 PCDP1665G1-REV.00 Page 1o Electrical Characteristics (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS o IF = 16 A, TJ = 25 C - 1.5 1.7 Forward Voltage Drop VF V o IF = 16 A, TJ = 175 C - 1.8 - o V = 650 V, T = 25 C - 5 100 A R J Reverse Leakage Current IR o V = 650 V, T = 175 C - 0.06 - mA R J Total Capacitive Charge QC I = 16 A, V = 400V - 34.9 - nC F R VR = 1V, f = 1MHz - 618 - pF Total Capacitance C VR = 200V, f = 1MHz - 62.1 - pF VR = 400V, f = 1MHz - 48.3 - pF Capacitance Stored Energy EC VR = 400V - 5.3 - J o Thermal Resistance RJC - 1.1 - C/W November 9,2020 PCDP1665G1-REV.00 Page 2