PPJA3416 20V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) 20 V 5.8A Voltage Current Features RDS(ON) , VGS 4.5V, ID 5.8A<27m RDS(ON) , VGS 2.5V, ID 3.2A<40m RDS(ON) , VGS 1.8V, ID 1.6A<80m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc.. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A16 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 20 V DS Gate-Source Voltage V +12 V GS Continuous Drain Current I 5.8 A D Pulsed Drain Current I 23.2 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJA3416 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 20 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.5 0.77 1.2 V GS(th) DS GS D V =4.5V, I =5.8A - 23 27 GS D Drain-Source On-State Resistance R V =2.5V, I =3.2A - 32 40 m DS(on) GS D V =1.8V, I =1.6A - 61 80 GS D Zero Gate Voltage Drain Current I V =20V, V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+12V, V =0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 6.7 - g V =10V, I =5.8A, DS D Gate-Source Charge Q - 1.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 2 - gd Input Capacitance Ciss - 513 - V =10V, V =0V, DS GS Output Capacitance Coss - 75 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 59 - Switching Turn-On Delay Time td - 6 - (on) V =10V, I =5.8A, ns DD D Turn-On Rise Time tr 56 V =4.5V, GS Turn-Off Delay Time td - 23 - (off) (Note 1,2) R =6 us G Turn-Off Fall Time tf - 13 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1.5 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V =0V - 0.71 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited March 10,2014-REV.00 Page 2