The MUR1060F is an insulated-gate bipolar transistor (IGBT) designed and manufactured by Pingwei. It has a TO-220F shape and is RoHS compliant. This transistor features a new quadratic unclassified data structure and utilizes a n-channel and p-channel configuration to achieve high voltage, high frequency switching performance with low power losses and improved thermal performance. Additionally, the MUR1060F has high current density and is suited for power switching applications such as welding machines, inverters, and motor control systems.