Product Information

PSM20U100CT

Product Image X-ON

Datasheet
Schottky Barrier Diodes (SBD) TO-220AB RoHS

Manufacturer: Pingwei
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7704 ea
Line Total: USD 0.7704

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 09 Jun to Wed. 14 Jun

MOQ : 1
Multiples : 1

Stock Image

PSM20U100CT
Pingwei

1 : USD 0.7279
10 : USD 0.5947
30 : USD 0.5281
100 : USD 0.4613
500 : USD 0.422
1000 : USD 0.4023

     
Manufacturer
Pingwei
Product Category
Schottky Diodes & Rectifiers
Brand
Pingwei
Rohs
Y
Package
TO - 220AB
Voltage - Dc Reverse Vr Max
100 V
Current - Average Rectified Io
2x10 A
Voltage - Forward Vf Max @ If
700 mV @ 10A
Reverse Leakage Current Ir
100 uA @100V
Reverse Voltage Vr
100 V
Diode Configuration
Dual Common Cathode
Forward Voltage Vf@If
600 mV @10A
Average Rectified Current Io
10 A
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image R1MF
Diodes - Rectifiers - Fast Recovery SMF RoHS
Stock : 2080
Stock Image R2MF
Diodes - Rectifiers - Fast Recovery SMF RoHS
Stock : 0
Stock Image PSM30U60CT
Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 168
Stock Image PSM40U200CT
Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 0
Stock Image PSM40U150FCT
Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0
Stock Image PSM20U80FCT
Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0
Stock Image PSM20U60CT
Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 768
Stock Image R2M
Diodes - Rectifiers - Fast Recovery SOD-123FL RoHS
Stock : 2320
Stock Image RB-RS07B
Diodes - Rectifiers - Fast Recovery PINGWEI() RoHS
Stock : 2720
Stock Image PSM20U200GS
Schottky Barrier Diodes (SBD) TO-252 RoHS
Stock : 14
Image Description
Stock Image PSM30U60CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 168

Stock Image PSM40U200CT

Schottky Barrier Diodes (SBD) TO-220AB RoHS
Stock : 0

Stock Image S215R

Schottky Barrier Diodes (SBD) SMAF RoHS
Stock : 6180

Stock Image S310BF

Schottky Barrier Diodes (SBD) SMBF RoHS
Stock : 395

Stock Image DSS16

Schottky Barrier Diodes (SBD) SOD-123FL RoHS
Stock : 0

Stock Image HBRA10100BCT

Schottky Barrier Diodes (SBD) TO-263 RoHS
Stock : 0

Stock Image S345R

Schottky Barrier Diodes (SBD) SMF RoHS
Stock : 6120

Stock Image SS14

Schottky Barrier Diodes (SBD) SMA RoHS
Stock : 532228

Stock Image PSB30U100FSR

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

Stock Image PSB30U200FCTR

Schottky Barrier Diodes (SBD) ITO-220AB RoHS
Stock : 0

P S M2 0 U 10 0 C T& P S M2 0 U 10 0 F CT P S M 2 0 U 1 0 0 C T & P S M 2 0 U 1 0 0 F C T 2 0 . 0 A M P S . S C H O T T K Y B A R R I E R R E C T I F I E R S F E AT U R E .High current capability .Ultra low forward voltage drop .Low power loss, high efficiency .High surge capability .High temperature soldering guaranteed TO-220AB ITO-220AB 260C /10seconds, 0.25 (6.35mm)from case. PSM20U100CT PSM20U100FCT M E C H A N I C A L D ATA .Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy .Mounting position: any Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20% M A X I M U M R AT I N G S (TC=25 unless otherwise noted) Pa r a me te r Symbol P S M 2 0 U 1 0 0 C T & P S M 2 0 U 1 0 0 F C T U nit s Maximum Recurrent Peak Reverse Voltage 100 V V R RM Maximum RMS Voltage 70 V V R MS Maximum DC blocking Voltage 100 V V D C Maximum Average Forward Rectified Current P e r Le g 10.0 A I F (AV) at T =100C Tot a l d e v i c e 20.0 C Peak Forward Surge Current 8.3ms single half sine-wave 175.0 A I F SM superimposed on rated load (JEDEC method) P e r Le g Typical Junction Capacitance (Note 1) 500 pF CJ Operation Junction Temperature and Storage Temperature -55 to +150 C T , T J STG Maximum Mounting torque, M3 or 6-32 srew 1.1Nm (10 lbfin) E L E C T R I C A L C H A R A C T E R I S T I C S - ( pe r l e g ) (T =25 unless otherwise noted) C Pa r a me te r Sy m bo l Tes t c o ndit io ns Typ M a x U nits 0.45 --- IF=3A 0.50 --- T =25 I =5A J F I =10A 0.60 0.70 F Forward voltage drop V V F I =3A 0.38 --- F T =125 I =5A 0.45 --- J F I =10A 0.58 0.68 F T =25 V =100V --- 100 A J R Reverse leakage current I R T =125 V =100V --- 20 mA J R T H E R M A L C H A R A C T E R I S T I C S(TC=25 unless otherwise noted) Pa r a me te r Symbol P SM 2 0 U 1 00 C T P SM 2 0U 1 0 0 F C T U nits Typical Thermal Resistance (Note 2) 2.0 3.0 C /W R ( JC ) N o te s : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2. Thermal Resistance from Junction to Case 1P S M2 0 U 10 0 C T& P S M2 0 U 10 0 F CT RATING AND CH ARACT E RI S T I C CURVE S FIG.1-TYPICAL FORWARD CURRENT FIG.2-TYPICAL INSTANTANEOUS FORWARD DERATING CURVE CHARACTERISTICS 100 20.0 TJ=125 10 TJ=25 10.0 Pulse Width=300s 1% Duty Cycle 1 Single Phase Half Wave 60Hz Resistive or inductive Load 0 .1 100 150 0 50 200 .1 .3 0.5 0.7 0.9 CASE TEMPERTURE,() INSTANEOUS FORWARD VOLTAGE,(V) FIG.4-TYPICAL REVERSE FIG.3-MAXIMUN NON-REPETITIVE CHARACTERISTICS FORWARD SURGE CURRENT 100 200 8.3ms Single Half 10 Sine-Wave (JEDEC Method) 150 TJ=125 1 0.1 100 50 0.01 TJ=25 0.001 0 20 40 80 0 60 100 100 1 10 PERCENT OF RATED PEAK REVERSE NUMBER OF CYCLES AT 60Hz VOLTAGE,(V) 2 PEAK FORWARD SURGE AVERGE FORWARD CURRENT,(A) RECTIFIED CURRENT,(A) INSTANEOUS FORWARD INSTANEOUS REVERSE CURRENT,(A) CURRENT,(mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Chongqing Pingwei Tech