X-On Electronics has gained recognition as a prominent supplier of PDN3909S mosfet across the USA, India, Europe, Australia, and various other global locations. PDN3909S mosfet are a product manufactured by Potens. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PDN3909S Potens

PDN3909S electronic component of Potens
Images are for reference only
See Product Specifications
Part No.PDN3909S
Manufacturer: Potens
Category:MOSFET
Description: MOSFET P Trench 30V 5.1A 2.2V @ 250uA 46 mΩ @ 2A,4.5V SOT-23-4S RoHS
Datasheet: PDN3909S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
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We are delighted to provide the PDN3909S from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PDN3909S and other electronic components in the MOSFET category and beyond.

The PDN3909S is a Potens-manufactured metal-oxide-semiconductor field-effect transistor (MOSFET) with a trench-gate structure and a 30V breakdown voltage. It is designed to handle up to 5.1A current, and has a maximum on-voltage of 2.2V at 250uA. It has a typical on-resistance of 46 mO when carrying 2A, and a maximum off-voltage of 4.5V. The device is contained in a small SOT-23-4S surface-mount package and is RoHS-compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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