Three Phase PSDH 70 I = 70 A dAV Half Controlled Bridges V = 400-1600 V RRM Preliminary Data Sheet V V Type RSM RRM V V DSM DRM 500 400 PSDH 70/04 ~ 900 800 PSDH 70/08 ~ ~ 1300 1200 PSDH 70/12 1500 1400 PSDH 70/14 *1700 *1600 PSDH 70/16 * Delivery on request Symbol Test Conditions Maximum Ratings Features Package with fast-on terminals T = 85 C per module 70 A I C dAV Isolation voltage 3000 V T = 45C t = 10 ms (50 Hz), sine 550 A I , I VJ TSM FSM Planar glasspassivated chips V = 0 t = 8.3 ms (60 Hz), sine 600 A R Low forward voltage drop T = T t = 10 ms (50 Hz), sine 500 A VJ VJM UL registered E 148688 V = 0 t = 8.3 ms (60 Hz), sine 550 A R 2 2 T = 45C t = 10 ms (50 Hz), sine 1520 A s VJ i dt Applications 2 V = 0 t = 8.3 ms (60 Hz), sine 1520 A s R Heat and temperature control for 2 industrial furnaces and chemical T = T t = 10 ms (50 Hz), sine 1250 A s VJ VJM 2 processes V = 0 t = 8.3 ms (60 Hz), sine 1250 A s R Lighting control T = T repetitive, I = 50 A 150 (di/dt) VJ JVM T A/ s cr Motor control f = 50Hz, t = 200s P Power converter V = 2/3 V D DRM . Advantages I = 0.3 A non repetitive, I = I 500 A/ s G T dAV Easy to mount with two screws di /dt = 0.3 A/ s G Space and weight savings T = T V = 2/3 V 1000 V/ s (dv/dt) VJ VJM DR DRM cr Improved temperature and power R = , method 1 (linear voltage rise) GK cycling capability T = T t = 30s 10 W P VJ VJM P GM High power density I = I t = 500s 5 W T TAVM P 0.5 W Package, style and outline P GAVM Dimensions in mm (1mm = 0.0394) 10 V V RGM -40 ... + 125 C T VJ 125 C T VJM -40 ... + 125 C T stg 50/60 HZ, RMS t = 1 min 2500 V V ISOL t = 1 s 3000 I 1 mA V ISOL Mounting torque (M5) 2 - 2.5 Nm M d typ. 100 g Weight POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 PSDH 70 Symbol Test Conditions Characteristic Value T = T , V = V , V = V 5 mA I , I VJ VJM R RRM D DRM D R I = 80A, T = 25C 1.64 V V T VJ T For power-loss calculations only (T = T) 0.85 V V VJ VJM TO 11 r m T V = 6V T = 25C 1.5 V V D VJ GT T = -40C 1.6 V VJ V = 6V T = 25C 100 mA I D VJ GT T = -40C 200 mA VJ T = T V = 2/3 V 0.2 V V VJ VJM D DRM GD T = T V = 2/3 V 5 mA I VJ VJM D DRM GD 450 mA I T = 25C, t = 10s VJ P L I = 0.45A, di /dt = 0.45A/s G G 200 mA I T = 25C, V = 6V, R = VJ D GK H T = 25C, V = V 2 s t VJ D DRM gd I = 0.45A, di /dt = 0.45A/s G G T = T , I = 20A, t = 200s, V = 100V 250 s t VJ VJM T P R q -di/dt = 10A/s, dv/dt = 15V/s, V = 2/3 V D DRM per thyristor sine 180el 0.9 K/W R thJC per module 0.15 K/W per thyristor sine 180 el 1.1 K/W R thJK per module 0.183 K/W Creeping distance on surface 16.1 mm d S Creeping distance in air 7.5 mm d A 2 Max. allowable acceleration 50 m/s a 200 I T(OV) ------ I T =25C TSM I (A) VJ A 1:T = 25C TSM VJ us TVJ=45C TVJ=150C 2:T = 125C VJ 1.6 550 490 150 100 1.4 1 1.2 100 t gd 2 1 10 0 V RRM 50 0.8 1/2 V RRM 0.6 1 V RRM I F 0 1 0.4 100 0.5 1 1.5 2 10 1000 0 1 2 3 I mA 10 10 t ms 10 10 G V V Fig. 1 Forward current vs. Fig. 2 Gate trigger delay time Fig. 3 Surge overload current voltage drop per diode or per diode (or thyristor) I , FSM thyristor I : Crest value t: duration TSM POWERSEM GmbH, Walpersdorfer Str. 53 2003 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20