PSI 75/06 Powersem

PSI 75/06 electronic component of Powersem
PSI 75/06 Powersem
PSI 75/06 IGBT Modules
PSI 75/06  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSI 75/06 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. PSI 75/06 IGBT Modules are a product manufactured by Powersem. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. PSI 75/06
Manufacturer: Powersem
Category: IGBT Modules
Description: IGBT half-bridge; Urmax:600V; Ic:48A; Ifsm:100A; ECO-PAC 2; screw
Datasheet: PSI 75/06 Datasheet (PDF)
Price (USD)
1: USD 41.223 ea
Line Total: USD 41.22 
Availability : 0
  
QtyUnit Price
1$ 41.223
2$ 38.987
3$ 38.974

Availability 0
Ship by Fri. 08 Aug to Tue. 12 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 41.223
2$ 38.987
3$ 38.974

   
Manufacturer
Product Category
Power Dissipation
Mounting
Case
Electrical Mounting
Semiconductor Structure
Topology
Application
Type Of Module
Max Forward Impulse Current
Collector Current
Max Off-State Voltage
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSI 75/06 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSI 75/06 and other electronic components in the IGBT Modules category and beyond.

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TM ECO-PAC 2 IGBT Module I = 69 A PSIG 75/06 C25 V = 600 V PSI 75/06* Preliminary Data Sheet CES V = 2.3 V PSIS 75/06* CE(sat)typ. PSSI 75/06* X15 OP 9 AC 1 IK 10 NTC L9 X13 L9 E2E2 T16 GH 10 NTC X16 X15 X15 K10 L9 F1 X16 NTC VX 18 IK 10 AC 1 X16 PSIS 75/06* PSSI 75/06* PSI 75/06* IGBTs AIJK LMN S Symbol Conditions Maximum Ratings V T = 25C to 150C 600 V CES VJ V 20 V GES I T = 25C 69 A C25 C PSIG 75/06* I T = 80C 48 A C80 C I V = 15 V R = 22 T = 125C 100 A CM GE VJ G V RBSOA, Clamped inductive load L = 100 H V CEK CES *NTC optional t V = V V = 15 V R = 22 T = 125C 10 s CES GE VJ SC CE G (SCSOA) non-repetitive Features P T = 25C 208 W Package with DCB ceramic tot C base plate Isolation voltage 3000 V Symbol Conditions Characteristic Values Planar glass passivated chips (T = 25C, unless otherwise specified) VJ Low forward voltage drop min. typ. max. Leads suitable for PC board V I = 75 A V = 15 V T = 25C 2.3 2.8 V VJ CE(sat) C GE soldering T = 125C 2.8 V VJ UL registered, E 148688 V I = 1 mA V = V 4.5 6.5 V GE(th) C GE CE Applications I V = V V = 0 V T = 25C 0.8 mA VJ CES CE CES GE AC and DC motor control T = 125C 4.4 mA VJ AC servo and robot drives I V = 0 V V = 20 V 100 nA GES CE GE power supplies welding inverters t 50 ns d(on) t 55 ns r Inductive load, T = 125C VJ Advantages t 300 ns d(off) V = 300 V I = 40 A CE C t 30 ns Easy to mount with two screws f V = 15/0 V R = 22 GE G E 1.8 mJ Space and weight savings on E 1.4 mJ Improved temperature and off power cycling capability C V = 25 V V = 0 V f = 1 MHz 2.8 nF ies CE GE High power density R (per IGBT) 0.6 K/W thJC Small and light weight R with heatsink compound (0.42 K/m.K 50 m) 1.2 K/W thJH Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20PSIG PSI PSIS PSSI 75/06 Reverse diodes (FRED) Package style and outline Symbol Conditions Maximum Ratings Dimensions in mm (1mm = 0.0394) I T = 25C 56 A F25 C PSI I T = 80C 35 A F80 C Symbol Conditions Characteristic Values min. typ. max. V I = 40 A T = 25C 2.32 2.59 V VJ F F T = 125C 1.58 V VJ I I = 30 A di /dt = 500 A/s T = 125C 15 A VJ RM F F t V = 300 V V = 0 V 70 ns rr R GE R 1.3 K/W thJC R with heatsink compound (0.42 K/m.K 50 m) 2.6 K/W thJH Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R T = 25C 4.75 5.0 5.25 k 25 B 3375 K 25/50 Module PSSI Symbol Conditions Maximum Ratings T -40...+150 C VJ T -40...+150 C stg V I 1 mA 50/60 Hz 3000 V~ ISOL ISOL M Mounting torque (M4) 1.5 - 2.0 Nm d 14 - 18 lb.in. 2 a Max. allowable acceleration 50 m/s Symbol Conditions Characteristic Values min. typ. max. d Creepage distance on surface (Pin to heatsink) 11.2 mm S d Strike distance in air (Pin to heatsink) 11.2 mm A Weight 24 g PSIG PSIS 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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