Product Information

PTF8N65

PTF8N65 electronic component of PUOLOP

Datasheet
MOSFET N Channel 650V 7A(Tc) 4V @ 250uA 1.1O @ 4A,10V TO220F RoHS
Manufacturer: PUOLOP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.537 ea
Line Total: USD 0.54

2 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

PTF8N65
PUOLOP

1 : USD 0.4933
10 : USD 0.4006
30 : USD 0.3611
100 : USD 0.3117
500 : USD 0.2645
1000 : USD 0.2506

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The PTF8N65 manufactured by PUOLOP is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET), specified for Rating and Characteristics Curves. It has a voltage rating of 650V, a maximum continuous drain current of 7 Amps (Tc), and an on-state resistance of 1.1 ohm at 4 Amps. Its drain-source breakdown voltage (BVds) is 8,000V. The gate-source voltage (Vgs) nominal threshold is 4V at 250uA and the maximum allowable is 10V. It comes in a TO-220F package and meets RoHS requirements.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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