Product Information

HD2301

HD2301 electronic component of High Diode

Datasheet
MOSFET P Channel 20V 2.3A 1V @ 250uA 110mO @ 3A,4.5V SOT-23 RoHS
Manufacturer: High Diode
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0452 ea
Line Total: USD 0.9

1765 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
1765 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 20
Multiples : 20

Stock Image

HD2301
High Diode

20 : USD 0.0436
200 : USD 0.0357
600 : USD 0.0316
3000 : USD 0.0254
9000 : USD 0.0229
21000 : USD 0.0217

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The HD2301 is an MOSFET P-Channel transistor manufactured by High Diode. It is a surface mounted component with RoHS certification, which is compliant with environmental regulations. It has a total drain source voltage of 20V and a maximum current of 2.3Amps. Its gate source voltage is 1V at a gate source leakage current of 250 microAmps. Its on-state resistance is 110mOhms and a maximum gate source threshold voltage of 4.5V. This component is available in a SOT-23 package with three terminals. It belongs to the 20V HV MOSFETs series that is designed with high voltage, low gate charge and low RDSON.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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