CXE-1089Z 50MHz to 1200MHz 75 pHEMT MMIC LNA CXE-1089Z 50MHz to 1200MHz 75 pHEMT MMIC LNA Package: SOT-89 Product Description Features RFMDs CXE-1089Z is a high performance 75 pHEMT MMIC low-noise Flat Gain: 13dB+/-0.4dB, 50MHz to 1000MHz amplifier utilizing a Darlington configuration with active bias. The active bias network provides stable current over temperature and process Excellent Return Loss: threshold voltage variations. The CXE-1089Z amplifier operates linearly >15.5dB from +3.3V , +4.75V , or +5V power supplies. DC DC DC Low Distortion: CTB=-82dBc, CSO=-66dBc Operates from Single, Fixed +3.3V , +4.75V , or Gain and Return Loss versus Frequency, DC DC Optimum Technology Matching Applied T=25C +5V Supply 15.0 -5 DC GaAs HBT 14.0 -8 On-Chip Active Bias Network GaAs MESFET 13.0 -11 S21 InGaP HBT 12.0 -14 Applications SiGe BiCMOS 11.0 -17 S22 Si BiCMOS CATV Set Top Box / Tuners 10.0 -20 SiGe HBT 9.0 -23 CATV Drop Amplifiers GaAs pHEMT 8.0 -26 Optical Rx/Tx Si CMOS 7.0 -29 S11 Si BJT 6.0 FTTH Video Solutions -32 GaN HEMT 5.0 -35 0.0 200.0 400.0 600.0 800.0 1000.0 1200.0 InP HBT Frequency (MHz) RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 13.0 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 18.5 dBm 500MHz Output Third Order Intercept Point 38.5 dBm 500MHz CSO -66.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input CTB -82.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input XMOD -78.0 dBc 55.25MHz to 745.25MHz, 110Ch, Flat Tilt, 15dBmV Input Input Return Loss, Worst Case 16.5 dB 50MHz to 1000MHz Output Return Loss, Worst Case 15.5 dB 50MHz to 1000MHz Noise Figure 3.0 dB 500MHz Device Operating Voltage 5.00 5.25 V Device Operating Current 110.0 mA Quiescent Thermal Resistance 57.5 C/W Junction-to-case Test Conditions: V =5V, I =110mA Typ, OIP Tone Spacing=1MHz, P per tone=8dBm, T =25C, Z =Z =75, Tested with App Circuit D D 3 OUT L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS100917 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 12 Gain (dB) Return Loss (dB)CXE-1089Z Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 12.9 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 17.2 dBm 500MHz Output Third Order Intercept Point 37.8 dBm 500MHz CSO -61 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input CTB -79 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40C to +85C Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40C to +85C Noise Figure 2.9 dB 500MHz Device Operating Voltage 4.75 4.9 V DC Device Operating Current 106 mA Quiescent Test Conditions: V =+4.75V , I =106mA, Typ. OIP3 Tone Spacing=1MHz, P per tone=+8dBm D DC D OUT T=+25C, Z =Z =75 , Tested with +5V Applications Circuit S I DC Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 12.7 dB 500MHz Gain Flatness +/-0.4 dB 50MHz to 1000MHz Output Power at 1dB Compression 14.2 dBm 500MHz Output Third Order Intercept Point 35.4 dBm 500MHz CSO -56 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input CTB -78 dBc 55.25MHz to 547.25MHz, 79Ch, NTSC, Flat Tilt, +15.5dBmV Input Input Return Loss, Worst Case 16.4 dB 50MHz to 1000MHz, -40C to +85C Output Return Loss, Worst Case 17.5 dB 50MHz to 1000MHz, -40C to +85C Noise Figure 2.8 dB 500MHz Device Operating Voltage 3.3 3.5 V DC Device Operating Current 75 mA Quiescent Test Conditions: V =+3.3V , I =75mA, Typ. OIP3 Tone Spacing=1MHz, P per tone=+8dBm D DC D OUT T=+25C, Z =Z =75 , Tested with +5V Applications Circuit S I DC Absolute Maximum Ratings Parameter Rating Unit Device Current (I ) 125 mA D Caution ESD sensitive device. Device Voltage (V)5.5 V D Exceeding any one or a combination of the Absolute Maximum Rating conditions may Power Dissipation 690 mW cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- RF Input Power* (See Note) 23 dBm mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Junction Temperature (T)+150 C J RoHS status based on EUDirective2002/95/EC (at time of this document revision). Operating Temperature Range (T ) -40 to +85 C L The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Storage Temperature Range -65 to +150 C infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of ESD Rating - Human Body Model Class 1A RFMD. RFMD reserves the right to change component circuitry, recommended appli- (HBM) cation circuitry and specifications at any time without prior notice. Moisture Sensitivity Level MSL 2 *Note: Load condition, 10:1 VSWR Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: I V <(T -T )/R , j-l D D J L TH T =T L LEAD 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS100917