Product Information

RF3021TR7

RF3021TR7 electronic component of Qorvo

Datasheet
RF Switch ICs 0.01 to 6 GHz 27dBm, 0.45to1dB IL

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

RF3021TR7
Qorvo

1 : USD 5.2015
25 : USD 1.6619
100 : USD 1.4082
250 : USD 1.2509
500 : USD 1.1672
1000 : USD 1.072
2500 : USD 1.0149
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Switches
Switch Configuration
Insertion Loss
Off Isolation - Typ
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Operating Frequency
Minimum Operating Temperature
Technology
Packaging
Brand
Off Time - Max
On Time - Max
Development Kit
Operating Supply Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Supply Voltage - Max
Supply Voltage - Min
Taric
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RF3021SPDT, High Isolation, Single Bit Con- trol, Reflective Switch RF3021 SPDT, HIGH ISOLATION, SINGLE BIT CONTROL, REFLECTIVE SWITCH Package: QFN, 16-Pin, 3mm x 3mm Product Description Features The RF3021 is a high isolation single-pole double-throw (SPDT) reflective 10MHz to 6GHz Operation switch designed for general purpose switching applications requiring mod- 0.5dB Insertion Loss at 1GHz erate insertion loss and power handling capability. It features single-bit 0.9dB Insertion Loss at 6GHz control with operation as low as 3V. This GaAs pHEMT switch is housed in a compact 3mm, 16-pin, leadless QFN package. 68dB Isolation at 1GHz 40dBm Isolation at 6GHz 3V Minimum Voltage Optimum Technology 50dBm IP3 at 5V Matching Applied GaAs HBT Applications GaAs MESFET InGaP HBT Cellular Handset Applications SiGe BiCMOS Antenna Tuning Applications Si BiCMOS IEEE802.11b/g WiFi SiGe HBT Applications GaAs pHEMT Si CMOS Cellular Infrastructure Applications Si BJT GaN HEMT InP HBT RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Insertion Loss 0.5 dB Freq = 10MHz to 1.0GHz 0.55 0.8 dB Freq = 1.0GHz to 2.0GHz 0.6 dB Freq = 2.0GHz to 3.0GHz 0.7 dB Freq = 3.0GHz to 5.0GHz 0.9 dB Freq = 5.0GHz to 6.0GHz Return Loss 18 dB Freq = 10MHz to 1.0GHz 18 dB Freq = 1.0GHz to 3.0GHz 14 dB Freq = 3.0GHz to 6.0GHz Isolation 68 dB Freq = 0.5GHz to 1.0GHz 53 58 dB Freq = 1.0GHz to 2.0GHz 50 dB Freq = 2.0GHz to 3.0GHz 43 dB Freq = 3.0GHz to 5.0GHz 40 dB Freq = 5.0GHz to 6.0GHz P0.1dB* 30 dBm Freq = 1.8GHz IP3* 50 dBm Freq = 0.5GHz to 2.5GHz, 1MHz spacing, 10 dBm/tone I , Supply Current 200 300 uA DD I , Control Current 20 uA C T , T 120 nS 50% of V to 10/90% of RF ON OFF CTRL T , T 35 nS 10/90% RF RISE FALL Test Conditions: V =5V, 25C, 50 , with application circuit with 100pF DC blocking capacitors DD *Note: Performance degrades below 50MHz. RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS140916 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 6RF3021 Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may Supply Voltage V 5.5 V cause permanent damage to the device. Extended application of Absolute Maximum DD Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Control Voltage (V ) 5.5 V C tions is not implied. RF Input Power (on state) 32 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Storage Temp -65 to +150 C cation circuitry and specifications at any time without prior notice. ESD Rating (HBM) Class 0 RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free Moisture Sensitivity Level MSL 2 per IEC 61249-2-21, < 1000 ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Evaluation Board Layout Broadband Application Circuit (500MHz to 4000MHz) - all capacitors are 100pF. Operation outside this band requires re-opti- mization of the capacitors. Truth Table V RFC-RF1 RFC-RF2 C 0 OFF ON 1 ON OFF Logic 0: 0V < V < 1.0V C Logic 1: 2V < V < 5V C 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 6 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS140916

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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