T1G4004532-FS 45W, 32V, DC 3.5 GHz, GaN RF Transistor General Description The Qorvo T1G4004532-FS is a 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuints proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Product Features Evaluation boards are available upon request. Frequency: DC to 3.5 GHz 1 Output Power (P3dB) : 78 W 1 Linear Gain : 20 dB 1 Typical DEFF3dB : 73% Operating Voltage: 32 V Low thermal resistance package Functional Block Diagram CW and Pulse capable Note: 1 3 GHz Applications Military radar Civilian radar Professional and military radio communications Test instrumenation Wideband or narrowband amplifiers Jammers Part No. Description T1G4004532-FS DC3.5GHz RF Transistor 1095350 2.7 3.5 GHz EVB Rev. B - 1 of 20 - Disclaimer: Subject to change without notice 2019 Qorvo www.qorvo.com T1G4004532-FS 45W, 32V, DC 3.5 GHz, GaN RF Transistor 1 Absolute Maximum Ratings Parameter Rating Units Breakdown Voltage, BVD +100 V Gate Voltage Range, V -7 to +2 V G Drain Current, IDMAX 14.5 A Gate Current Range, IG See page 4. mA Power Dissipation, CW, P , Base Temperature = 85 C 61 W DISS RF Input Power, CW, 50, T = 25C +41 dBm Mounting Temperature (30Seconds) 320 C Storage Temperature 40 to +150 C Notes: 1 Operation of this device outside the parameter ranges given above may cause permanent damage. 1 Recommended Operating Conditions Parameter Min Typ Max Units Operating Temperature Range 40 +25 +85 C Drain Voltage Range, V +12 +32 +40 V D 3 Drain Current, ID 2.5 A Drain Bias Current, I 220 mA DQ 4 Gate Voltage, V 2.9 V G 2 Power Dissipation, CW (PD) 44 W 2, 3 Power Dissipation, Pulsed (P ) 68 W D Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 C. 3. Drain current at P3dB, Pulse Width = 100 uS, Duty Cycle = 20%. 4. To be adjusted for desired I DQ Rev. B - 2 of 20 - Disclaimer: Subject to change without notice 2019 Qorvo www.qorvo.com