TQP5525 Qorvo

TQP5525 electronic component of Qorvo
TQP5525 Qorvo
TQP5525 RF Amplifier
TQP5525  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TQP5525 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. TQP5525 RF Amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

Part No. TQP5525
Manufacturer: Qorvo
Category: RF Amplifier
Description: TriQuint (Qorvo) RF Amplifier 802.11anac 5GHz Gain 32dB
Datasheet: TQP5525 Datasheet (PDF)
Price (USD)
1: USD 10.5804 ea
Line Total: USD 10.58 
Availability : 69
  
Ship by Mon. 08 Sep to Thu. 11 Sep
QtyUnit Price
1$ 10.5804
10$ 6.1518
30$ 5.5468
100$ 5.0406
500$ 4.9772

Availability 69
Ship by Mon. 08 Sep to Thu. 11 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.5804
10$ 6.1518
30$ 5.5468
100$ 5.0406
500$ 4.9772

   
Manufacturer
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RoHS - XON
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Gain
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NF - Noise Figure
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We are delighted to provide the TQP5525 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TQP5525 and other electronic components in the RF Amplifier category and beyond.

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ADVANCED ADVANCE D TQP5525 Wi-Fi Power Amplifer Product Overview The TQP5525 is high power WLAN power amplifier module containing an internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module provides high gain (32dB), high linearity, industry leading EVM floor, and excellent spectral purity for wideband OFDM applications. The architecture and interface are optimized for the most stringent EVM requirements of next generation 802.11.ac WLAN devices. The TQP5525 features chipset logic compatible control voltages and buffered PA enable pin (PAEN) all of which draw very low 20 Pin 4x4 mm QFN Package current to facilitate ease of use and compatibility with current and future transceiver generations. With its optimized power dissipation, this amplifier module is well suited for Key Features implementation into next generation MIMO configurations and well designed to work with or without digital pre-distortion (DPD). 49005925MHz P = +18dBm MCS9 VHT80 -36dB Dynamic EVM OUT P = +25dBm MCS7 HT40 -30dB Dynamic EVM OUT P = +26.5dBm MCS0 HT20 Spectral Mask Compliance OUT Optimized for +5 V Operation, 3.3 to 5V Capable Functional Block Diagram 32dB Tx Gain Integrated DC Power Detector Applications Access Points Wireless Routers Residential Gateways Customer Premise Equipment Internet of Things Ordering Information Part Number Description TQP5525 13 reel with 2,500 pcs TQP5525PCK401 Assembled Eval Board w/ 5 pcs Top View 1 of 11 www.qorvo.com TQP5525 Data Sheet 030620 Subject to change without notice TQP5525 Wi-Fi Power Amplifier Absolute Maximum Ratings Parameter Conditions Rating Device Voltage VCC1, VCC2, VCC3 Up to +6 V Storage Temperature -40 to 150C Case Temperature Survival -40 to 100C 6 Junction Temperature MTTF > 1.0x10 hours 170C Into 50 Load for 802.11a-ac (No RF Input Power at RFIN +5 dBm Damage), Enabled Mode Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Recommended Operating Conditions Parameter Min. Typ. Max. Units Operating Frequency 4900 5925 MHz Device Voltage (V ) +3.15 +5 +5.25 V CC Control Voltage High +1.8 +3 V V CC1 Control Voltage - Low 0 +0.45 V TOPERATING* -40 +85 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions * TOPERATING is temperature at package ground. Electrical Specifications Parameter Conditions Min. Typ. Max. Units Transmit (RFIN-RFOUT) Mode Unless otherwise noted: V , V , V =5V, V =3V, T=+25C, PA EN=High CC1 CC2 CC3 PA EN (1) Wi-Fi 5 VHT80 Output Power 18 dBm MCS9 256QAM 11ac Dynamic EVM -40 -36 dB Wi-Fi 5 VHT80 Output Power 24 dBm MCS9 256QAM 11ac Dynamic EVM -36 -31 dB Wi-Fi 4 HT40 Output Power 25 dBm MCS7 64QAM 11n Dynamic EVM -33 dB POUT = +24 dBm, 11ac MCS0, 5 dB f = 5150-5250 MHz POUT = +26.5 dBm, 11ac MCS0, Margin to HT20 Spectral Mask 5 dB f = 5250-5725 MHz POUT = +27.5 dBm, 11ac MCS0, 5 dB f = 5725-5925 MHz f = 4900-5150 MHz 28 31 35 dB Gain f = 5150-5925 MHz 29 32 37 Gain Flatness Across any 80 MHz Channel -0.25 +0.25 dB f = 1716-1959 MHz -50 dB Out of Band Gain f = 3433-3917 MHz 0 dB TQP5525 Data Sheet 030920 Subject to change without notice www.qorvo.com 2 of 11

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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