TGA2526 2-20 GHz Low Noise Amplifier with AGC General Description The Qorvo TGA2526 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-20 GHz and is designed using Qorvo proven standard 0.15 um Power pHEMT production process. The TGA2526 provides a nominal 20 dBm of output power at 1 dB gain compression with a small signal gain of 17.5 dB. Greater than 30 dB adjustable gain can be achieved using the Vg2 pin. Typical noise figure is 2.5 dB at 12 GHz. Special circuitry on Vd, Vg1 and Vg2 pins provides ESD protection. Measured Performance The TGA2526 is suitable for a variety of wideband systems such as point to point radios, radar warning receivers and Bias conditions: Vd = 5 V, Id = 100 mA, Vg1 = -0.55 V , electronic counter measures. Vg2 = +1.3 V Typical The TGA2526 is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA2526 has a protective surface passivation layer providing environmental robustness. Applications Wideband Gain Block/LNA X-Ku Point to Point Radio 10 9 Electronic Warfare Applications 8 7 6 Product Features 5 4 Frequency Range: 2-20 GHz 3 2 Midband NF: 2.5 dB 1 Gain: 17.5 dB 0 >30 dB adjustable gain with Vg2 2 4 6 8 10 12 14 16 18 20 TOI: 29 dBm Typical Frequency (GHz) 22 dBm Nominal Psat, 20 dBm Nominal P1dB ESD Protection circuitry on Vd, Vg1, and Vg2 Ordering Information Bias: Vd = 5 V, Id = 100 mA, VG1 = -0.55 V, VG2 = +1.3 V, Typical Part Description Technology: 3 MI 0.15 um Power pHEMT TGA2526 GaAs MMIC Die, Gel Pack, Qty 100 Chip Dimensions: 2.090 x 1.350 x 0.100 mm TGA2526EVB1 TGA2526 Evaluation Board, Qty 1 TGA2526-XCC- Space Inspected Version Contact Sales SPACE Data Sheet Rev C June 2021 Subject to change without notice 1 of 14 www.qorvo.com NF (dB) TGA2526 2-20 GHz Low Noise Amplifier with AGC 1/ Absolute Maximum Ratings Symbol Parameter Value Notes V -V Drain to Gate Voltage 9 V D G VD Drain Voltage 7 V 2/ V 1 Gate 1 Voltage Range -2 to 0 V G VG2 Gate 2 Voltage Range -2 to +3 V I Drain Current 144 mA 2/ D I 1 Gate 1 Current Range -20 to 14 mA G IG2 Gate 2 Current Range -20 to 14 mA P Input Continuous Wave Power 22 dBm 2/ IN Channel Temperature 200 C T channel Storage Temperature 55 to 150 C T storage Note: 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV. 3/ ESD protection diodes on V , V and V will conduct current for voltages approaching turn-on voltages. Diode turn-on voltage D G1 G2 levels will decrease with decreasing temperature. Data Sheet Rev C, June 2021 Subject to change without notice 2 of 14 www.qorvo.com