TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier Product Description Qorvos TGA2578-CP is a packaged wideband power amplifier fabricated on Qorvos QGaN25 0.25um GaN on SiC process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of > 30 %, and > 26 dB small signal gain. The TGA2578-CP is offered in a 10-lead 15.2 x 15.2 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA2578-CP is ideally suited to support both commercial and defense applications. Product Features Both RF ports have integrated DC blocking capacitors and Frequency Range: 26 GHz are fully matched to 50 Ohms. P : 45 dBm P = 23 dBm OUT IN Lead-free and RoHS compliant. PAE: >30% PIN = 23 dBm Small Signal Gain: > 26 dB IM3: -30 dBc 30 dBm Pout/Tone Bias: VD = +28V, IDQ = 400mA, VG = 2.8V typical Package Dimensions: 15.2 x 15.2 x 3.5mm Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for Functional Block Diagram more details Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Ordering Information Part No. Description TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier 1096052 TGA2578-CP Evaluation Board - 1 of 13 - Data Sheet Rev. D, March 18, 2019 www.qorvo.com TGA2578-CP 2 6 GHz 30 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ. Max Units Drain Voltage (VD) 40V Drain Voltage (V ) +28 V D Gate Voltage Range (V ) 8 to 0V G Drain Current, (I ) 400 mA DQ Drain Current (I ) 5A D Gate Voltage (V ) -2.8 Typical V G Gate Current (I ) See plot page 8 G T Range 40 +85 C BASE Power Dissipation (P ), 85C 85W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (P ), 50, 85C, CW 27dBm IN recommended operating conditions. Input Power (P ), 85C, VSWR 3:1, IN 27 dBm VD = 28V, CW Input Power (P ), 85C, VSWR 10:1, IN 25dBm VD = 28V, CW Lead Soldering Temperature 260C (30 Seconds) Storage Temperature 55 to 150C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 2 6 GHz Small Signal Gain >26 dB Input Return Loss >12 dB Output Return Loss >5 dB Output Power ( PIN = 23dBm) 45 dBm Power Added Efficiency ( P = 23dBm) >30 % IN IM3 (Pout/tone = 30 dBm/Tone) -30 dBc IM5 (Pout/tone = 30 dBm/Tone) -40 dBc Small Signal Gain Temperature Coefficient 0.05 dB/C Output Power Temperature Coefficient -0.02 dBm/C Test conditions unless otherwise noted: 25C, V = +28V, I = 400mA, V = 2.8V typical, CW. D DQ G - 2 of 13 - Data Sheet Rev. D, March 18, 2019 www.qorvo.com