TGA2594-HM 2731GHz GaN Power Amplifier Product Description Qorvos TGA2594-HM is a packaged power amplifier fabricated on Qorvos 0.15um GaN on SiC process (QGaN15). Operating from 27 to 31GHz, the TGA2594- HM achieves 36.3dBm saturated output power with a power-added efficiency of 25%, and 25dB small signal gain. The TGA2594-HM is offered in a hermetically sealed 22- lead 7x7mm ceramic QFN designed for surface mount to a printed circuit board. The package has a Cu base, Product Features offering superior thermal management. The TGA2594-HM is ideally suited to support both commercial and military Frequency Range: 2731GHz applications. POUT: 36.3dBm (PIN = 17 dBm) Both RF ports have integrated DC blocking capacitors and PAE: 25% CW (P = 17 dBm) IN are fully matched to 50Ohms. Small Signal Gain: 25dB IM3: 35dBc 25dBm P /Tone OUT Lead free and RoHS compliant. Bias: VD = +20V, IDQ = 140mA Package Dimensions: 7.0 x 7.0 x 1.3mm Functional Block Diagram Applications 22 21 20 19 Military SATCOM Terminals Commercial SATCOM Terminals 1 Point-to-Point Digital Radio 18 Point-to Multipoint Digital Radio 17 2 16 3 4 15 5 14 13 6 23 7 12 Ordering Information 8 9 10 11 Part No. Description Top View TGA2594-HM 2731GHz GaN Power Amplifier TGA2594-HMEVBP01 Evaluation Board Data Sheet Rev. E, March 2021 - 1 of 15 - www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential TGA2594-HM 2731GHz GaN Power Amplifier Recommended Operating Absolute Maximum Ratings Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (V ) +29.5V Drain Voltage (V ) +20V D D Gate Voltage Range (VG) 4 to 0V Drain Current (IDQ) 140mA Drain Current (I ) 1.4A Gate Voltage (V ) 3.0 to 2.0 V D G Gate Current (I ), 85 C See plot pg. 3 Drain Current Under RF Drive G See plots pg. 7 (ID DRIVE) Power Dissipation (PDISS), 85 C 15W Gate Current Under RF Drive Input Power, CW, 50 , (P ) 30dBm IN See plots pg. 7 (IG DRIVE) Mounting Temperature 260C Temperature (T ) 40 to 85C BASE (30 Seconds) Electrical specifications are measured at specified test Storage Temperature 55 to 150C conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges given above recommended operating conditions. may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 27 31 GHz Small Signal Gain 25 dB Input Return Loss > 5 dB Output Return Loss > 5 dB Output Power (PIN = 17 dBm) 36.3 dBm Power Added Efficiency (P = 17 dBm) 25 % IN IM3 (POUT/Tone = 25dBm/Tone) 35 dBc IM5 (P /Tone = 25dBm/Tone) 43 dBc OUT Gate Leakage Current (VD = 10 V, VG = -3.7 V) 3.1 mA Small Signal Gain Temperature Coefficient 0.05 dB/C Output Power Temperature Coefficient 0.04 dBm/C Test conditions unless otherwise noted: 25C, V = +20V, I = 140mA, CW D DQ Data Sheet Rev. E, March 2021 - 2 of 15 - www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential