TGA4532 K-Band Power Amplifier Applications Point-to-Point Radio Communication Product Features Functional Block Diagram Vd Vd Vref Frequency Range: 17.5 20 GHz Power: 32.5 dBm Psat, 31.5 dBm P1dB 3 7 4 Gain: 23 dB 5 Vdet TOI: 43 dBm 22 dBm SCL Return Loss: 18 dB NF: 6 dB 1 6 RF In RF Out Integrated Power Detector Bias: Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical Dimensions: 2.4 x 1.9 x 0.1 mm 2 8 Vg Vg General Description Bond Pad Configuration The TriQuint TGA4532 is a K-Band Power Amplifier. Bond Pad Symbol The TGA4532 operates from 17.5 to 20 GHz and is 1 RF In designed using TriQuints power pHEMT production 2, 8 Vg process. 3, 7 Vd 4 Vref The TGA4532 typically provides 31.5 dBm of output 5 Vdet power at 1dB gain compression with small signal gain of 6 RF Out 23 dB. Third Order Intercept is 43 dBm at 22 dBm SCL. The TGA4532 is ideally suited for Point-to-Point Radio, and K-band communications. Lead-free and RoHS compliant Ordering Information Part No. ECCN Description TGA4532 EAR99 K-band Power Amplifier Standard order qty = 100 pieces. - 1 of 12 - Data Sheet: Rev B 04/30/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA4532 K-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typical Max Units Drain to Gate Voltage, Vd - Vg 10 V Vd 6 V Drain Voltage,Vd +6.5 V Id 900 mA Gate Voltage,Vg -4 to 0 V Id drive (Under RF 1200 mA Drive) Drain Current, Id 1960 mA Gate Current, Ig -8.2 to 113 mA Vg -0.7 V Power Dissipation, Pdiss 12.7 W Electrical specifications are measured at specified test conditions. RF Input Power, CW, 50,T = 25C 26 dBm o Specifications are not guaranteed over all recommended operating Channel Temperature, Tch 200 C conditions. Mounting Temperature o 320 C (30 Seconds) o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical. Parameter Min Typical Max Units Operational Frequency Range 17.7 19.7 GHz Gain 21 23 dB Input Return Loss -18 -14 dB Output Return Loss -18 -14 dB Output Power Saturation 32.5 dBm Output Power 1 dB Gain Compression 30 31.5 dBm Output TOI 22 dBm SCL 40 43 dBm Noise Figure 6 dB -0.025 dB/C Gain Temperature Coefficient Power Temperature Coefficient -0.005 dBm/C - 2 of 12 - Data Sheet: Rev B 04/30/15 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network