TGA2624 910 GHz 18 Watt GaN Power Amplifier Product Overview Qorvos TGA2624 is an x-band, high power MMIC amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25). The TGA2624 operates from 9 10 GHz and provides a superior combination of power, gain, and efficiency. Achieving 18 W of saturated output power with 27.5 dB of large signal gain and greater than 40% power-added efficiency, the TGA2624 provides the level of performance demanded by todays system architectures. Depending on the system requirements, the TGA2624 Key Features can support cost saving initiatives on existing systems while supporting next generation systems with increased Frequency Range: 9 10 GHz performance. P : 42.5 dBm (PIN = 15 dBm) SAT P1dB: > 38dBm Lead-free and RoHS compliant. PAE: > 40% (PIN = 15 dBm) Large Signal Gain: 27.5 dB Small Signal Gain: > 35 dB Return Loss: > 11 dB Bias: V = 28 V, I = 365 mA D DQ Pulsed VD: PW = 100 us and DC = 10% Die Dimensions: 5.0 x 2.62 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for Functional Block Diagram more details. Applications Weather and Marine Radar Ordering Information Part No. Description 910 GHz 18 Watt GaN Amplifier TGA2624 (10 Pcs.) TGA2624EVB Evaluation Board for TGA2624 Data Sheet Rev. A, January 2021 Subject to change without notice 1 of 14 www.qorvo.com TGA2624 9 10 GHz 18 Watt GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Drain Current (I ) 365 mA Gate Voltage Range (VG) -5 to 0 V DQ Drain Current (ID1-2) 1.6 A Operating Temperature 40 to +85 C Drain Current (I ) 2.1 A Electrical specifications are measured at specified test D3 conditions. Specifications are not guaranteed over all Gate Current (IG1-2) See plot, page 9 recommended operating conditions. Gate Current (I ) See plot, page 9 G3 Power Dissipation (P ), 85C DISS 49 W Input Power (PIN), CW, 50, VD = 25 dBm 28V, 85C Input Power (PIN), CW, VSWR 6:1, 19 dBm V = 28V, 85C D Soldering Temperature (30 s, max.) 320 C Storage Temperature 55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 9 10 GHz Small Signal Gain >35 dB Input Return Loss >11 dB Output Return Loss >11 dB Output Power (Pin = 15dBm) 41.5 >42.5 dBm Power Added Efficiency (Pin = 15dBm) 37 >40 % Power 1dB Compression (P1dB) >38 dBm Small Signal Gain Temperature Coefficient 0.06 dB/C Recommended Operating Voltage: 20 28 32 V Test conditions unless otherwise noted: 25 C, VD = 28 V, IDQ = 365 mA, Pulsed VD: PW = 100 us, DC = 10% Data Sheet Rev. A, January 2021 Subject to change without notice 2 of 14 www.qorvo.com