TGA2814-SM 3.13.5 GHz 80 W GaN Power Amplifier General Description Qorvos TGA2814-SM is a high-power, S-band amplifier fabricated on Qorvos production 0.25 um GaN on SiC process (QGaN25).The TGA2814-SM covers 3.13.5 GHz and provides >80 W of saturated output power, 24 dB of large-signal gain, and achieves 55 % power-added efficiency. The TGA2814-SM can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and performs well under pulse operation. Product Features With DC blocking capacitors on both RF ports, which are matched to 50 ohms, the TGA2814-SM is ideal for both Frequency Range: 3.13.5 GHz commercial and military radar systems. Output Power: 49.5 dBm (at Pin = 25 dBm) Power Gain >24 dB (at Pin = 25 dBm) Lead-free and RoHS compliant. PAE: 55% (at Pin = 25 dBm) Bias: V = 30 V, I = 200 mA D DQ Evaluation boards are available on request. Package Dimensions: 7.0 x 7.0 x 0.85 mm Applications Functional Block Diagram Military Radar Commercial Radar 1 36 2 35 3 34 4 33 5 32 RF IN 6 31 RF OUT RF IN 7 30 RF OUT 8 29 9 28 10 27 11 26 12 25 Ordering Information Part Description TGA2814-SM 3.13.5 GHz 80 W GaN Power Amplifier TGA2814-SM EVB TGA2814-SM Evaluation Board Data Sheet Rev A, July 2019 Subject to change without notice 1 of 15 www.qorvo.com 13 48 14 47 15 46 16 45 17 44 18 43 19 42 20 41 21 40 22 39 23 38 24 37 TGA2814-SM 3.13.5 GHz 80 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) 30 V Gate Voltage Range (VG) 8 to 0 V Drain Current (IDQ) 200 mA Drain Current (ID) 8.5 A Drain Current Under RF Drive (ID Drive) 5500 mA Gate Current (IG) See graph pg. 10 Gate Voltage Range (VG) 2.9 to 2.0 V (Typ.) Electrical specifications are measured at specified test Power Dissipation (P ) 166 W DISS conditions. Specifications are not guaranteed over all Input Power, CW, 50 , 85 C, (P ) 30 dBm IN recommended operating conditions. Input Power, V 3:1, VD = 30 V, SWR 27 dBm PW = 15 ms, DC = 30%, 85 C, (PIN) Storage Temperature 55 to 150 C Note: 1. Max. Input Power ratings based on die data Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, VD = 30 V, IDQ = 200 mA, PW = 100 us, DC = 10 % Parameter Min Typical Max Units Operational Frequency Range 3.1 3.5 GHz Input Return Loss (at I = 400 mA) >12 dB DQ Output Return Loss (at I = 400 mA) >7 dB DQ Small Signal Gain (at IDQ = 400 mA) >26 dB Power Gain Saturation (Pin = 24 dBm) >24 dB Output Power Saturation (Pin = 24 dBm) >49.5 dBm Power Added Efficiency (Pin = 24 dBm) >55 % Output Power Temperature Coefficient 0.006 dBm/C Data Sheet Rev A, July 2019 Subject to change without notice 2 of 15 www.qorvo.com