Advance Product Information September 19, 2005 DC - 20 GHz Discrete power pHEMT TGF2022-60 Key Features and Performance Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (Under RF Drive, Id rises from 448mA to 1480mA) Chip Dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) Product Description Primary Applications The TriQuint TGF2022-60 is a discrete 6.0 mm pHEMT which operates from Point-to-point Radio DC-20 GHz. The TGF2022-60 is High-reliability space designed using TriQuints proven Military standard 0.35um power pHEMT Base Stations production process. Broadband Wireless Applications The TGF2022-60 typically provides > 38 dBm of saturated output power 35 with power gain of 12 dB. The The 30 maximum power added efficiency is 57% which makes the TGF2022-60 25 MSG appropriate for high efficiency 20 applications. MAG 15 The TGF2022-60 is also ideally suited 10 for Point-to-point Radio, High-reliability 5 space, and Military applications. 0 02468 10 12 14 16 The TGF2022-60 has a protective Frequency (GHz) surface passivation layer providing environmental robustness. Lead-free and RoHS compliant Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com Maximum Gain (dB)Advance Product Information September 19, 2005 TABLE I TGF2022-60 MAXIMUM RATINGS Symbol Parameter 1/ Value Notes + V Positive Supply Voltage 12.5 V 2/ - V Negative Supply Voltage Range -5V to 0V + I Positive Supply Current (Quiescent) 2820 mA 2/ I Gate Supply Current 70 mA G P Input Continuous Wave Power 33 dBm 2/ IN P Power Dissipation See note 3 2/ 3/ D T Operating Channel Temperature 150 C 4/ CH T Mounting Temperature (30 Seconds) 320 C M T Storage Temperature -65 to 150 C STG 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P . D 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: P (max) = (150 C TBASE C) / 14.2 (C/W) D 4/ Junction operating temperature will directly affect the device median time to failure (T ). For maximum life, it is recommended that junction temperatures be maintained M at the lowest possible levels. TABLE II DC PROBE CHARACTERISTICS (T = 25 qC, Nominal) A Symbol Parameter Minimum Typical Maximum Unit Idss Saturated Drain Current - 1800 - mA Gm Transconductance - 2250 - mS V Pinch-off Voltage -1.5 -1 -0.5 V P V Breakdown Voltage -30 - -14 V BGS Gate-Source V Breakdown Voltage -30 - -14 V BGD Gate-Drain Note: For TriQuints 0.35um power pHEMT devices, RF breakdown >> DC breakdown 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw tqs.com Web: www.triquint.com